Non-volatile resistive memory device fabricated from CdSe quantum dot embedded in thermally grown In2O3 nanostructure by oblique angle deposition

Published 2016 View Full Article

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Title
Non-volatile resistive memory device fabricated from CdSe quantum dot embedded in thermally grown In2O3 nanostructure by oblique angle deposition
Authors
Keywords
Thin films, Physical vapor deposition, Nanoparticles, Semiconductors, Electron microscopy
Journal
PHYSICS LETTERS A
Volume 380, Issue 44, Pages 3743-3747
Publisher
Elsevier BV
Online
2016-09-16
DOI
10.1016/j.physleta.2016.09.013

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