4.8 Article

Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers

Journal

PHYSICAL REVIEW LETTERS
Volume 117, Issue 16, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.117.166806

Keywords

-

Funding

  1. U.S. DOE, Office of Science BES [DESC0004890]
  2. U.S. ONR Grant [N000141310754, NSF-ECCS1508873]
  3. German Science Foundation (DFG) [SCHA 1899/1-1]
  4. DFG [HA 5893/4-1, SPP 1666]
  5. Div Of Electrical, Commun & Cyber Sys
  6. Directorate For Engineering [1508873] Funding Source: National Science Foundation

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We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

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