Journal
PHYSICAL REVIEW LETTERS
Volume 116, Issue 19, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.116.197401
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Funding
- International Max Planck Research School of Advanced Photon Science
- DFG Cluster of Excellence: Munich-Centre for Advanced Photonics (MAP)
- MURI Grant from the U.S. Airforce Office of Scientific Research [FA9550-15-1-0037]
- MURI Grant from the U.S. Office of Naval Research [N00014-13-1-0649]
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We predict that a direct band gap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations. In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. The asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase of the driving pulse. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.
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