Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale

Time-resolved single dopant charge dynamics in silicon

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Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

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Electron paramagnetic resonance of individual atoms on a surface

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Resonant tunnelling in a quantum oxide superlattice

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Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

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Control of quantum magnets by atomic exchange bias

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Large negative differential conductance in single-molecule break junctions

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Single-Electron Dynamics of an Atomic Silicon Quantum Dot on theH−Si(100)−(2×1)Surface

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Versatile scanning tunneling microscopy with 120 ps time resolution

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Quantitative mapping of fast voltage pulses in tunnel junctions by plasmonic luminescence

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Quantum engineering at the silicon surface using dangling bonds

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Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device

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Three-Terminal Graphene Negative Differential Resistance Devices

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Bistability in Atomic-Scale Antiferromagnets

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Tunnel coupled dangling bond structures on hydrogen terminated silicon surfaces

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Coulomb Energy Determination of a Single Si Dangling Bond

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Measurement of Fast Electron Spin Relaxation Times with Atomic Resolution

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Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room Temperature

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Nuclear Coupling and Polarization in Molecular Transport Junctions: Beyond Tunneling to Function

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Probing the Carrier Capture Rate of a Single Quantum Level

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