Journal
PHYSICAL REVIEW LETTERS
Volume 116, Issue 10, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.116.106101
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Funding
- NSF [MRSEC DMR-1119826, DMR-1309868, CNS 08-21132, TG-MCA08X007]
- DOE, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
- U.S. Department of Energy, Office of Basic Energy Science [DE-AC02-98CH10886]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1309868] Funding Source: National Science Foundation
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The strong interaction at an interface between a substrate and thin film leads to epitaxy and provides a means of inducing structural changes in the epitaxial film. These induced material phases often exhibit technologically relevant electronic, magnetic, and functional properties. The 2 x 1 surface of a Ge(001) substrate applies a unique type of epitaxial constraint on thin films of the perovskite oxide BaTiO3 where a change in bonding and symmetry at the interface leads to a non-bulk-like crystal structure of the BaTiO3. While the complex crystal structure is predicted using first-principles theory, it is further shown that the details of the structure are a consequence of hidden phases found in the bulk elastic response of the BaTiO3 induced by the symmetry of forces exerted by the germanium substrate.
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