4.6 Article

Robust band gap of TiS3 nanofilms

Journal

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 18, Issue 22, Pages 14805-14809

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c6cp01125j

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Funding

  1. Office of Science, the Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division (MSED) of the U.S. Department of Energy (DOE) under the organic/inorganic nanocomposites program [DE-AC02-05CH11231, KC3104]

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First-principles calculations have been performed on the band structure of mono-and few-layer TiS3 nanofilms. It is found that the band gap character of the TiS3 films is quite robust, almost independent of layer thickness, vertical strain and stacking order, which is in sharp contrast to most other twodimensional materials, such as MoS2. The robustness of the band gap originates from the location of the CBM and VBM states, which are at the center atoms of TiS3, and are thus unaffected by the layer-layer coupling. Such a property of TiS3 nanofilms promises good application potential in nanoelectronics and optoelectronics, and also makes TiS3 a good platform to study the electronic properties of a material in the two-dimensional limit.

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