☆ 4.4 Article Proceedings Paper

Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2016)

Journal

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Volume 213, Issue 4, Pages 893-897

Publisher

WILEY-V C H VERLAG GMBH

DOI: 10.1002/pssa.201532570

Keywords

AlGaN; GaN; high electron mobility transistors; nanocrystalline materials; self-heating

Categories

Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Abstract

Top-side integration of nanocrystalline diamond films in the fabrication sequence of AlGaN/GaN high electron mobility transistors is demonstrated. Reliable oxygen plasma etching of the diamond capping layer, required for a diamond-before-gate process, was implemented by using a sacrificial SiN dummy gate. Hall characterization showed minimal (similar to 6%) reduction in sheet carrier density and commensurate increase in sheet resistance, while maintaining mobility and on-state drain current density. Off-state drain current and threshold voltage were increased, likely by fluorination of the AlGaN surface after removal of the sacrificial gate, even though a 20 nm thick Al2O3 layer was used as a SF6-plasma etch stop. Pulsed I-DS and on-resistance were improved, indicating that a 10 nm SiN/500 nm NCD could offer improved AlGaN surface passivation compared to a more conventional 100 nm thick PECVD SiN film. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Authors

I am an author on this paper

Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4

Not enough ratings

Secondary Ratings

Novelty

-

Significance

-

Scientific rigor

-

Rate this paper

Recommended

Article Engineering, Electrical & Electronic

MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor

Nipun Sharma, Sumit Kumar, Ankur Gupta, Surani Bin Dolmanan, Dharmraj Subhash Kotekar Patil, Swee Tiam Tan, Sudhiranjan Tripathy, Mahesh Kumar

Summary: By employing MoS2 functionalization on AlGaN/GaN HEMTs sensors, the researchers have successfully developed a sensitive and selective gas sensor for NO2 detection at room temperature. The sensor exhibited enhanced sensing response and complete recovery without any external stimuli, making it a promising candidate for nitride-based integrated electronics.

SENSORS AND ACTUATORS A-PHYSICAL (2022)

Add to Collection

Article Chemistry, Multidisciplinary

Quantifying the Plasmonic Generation Rate of Non-Thermal Hot Carriers with an AlGaN/GaN High-Electron-Mobility Transistor

Chun-Yu Li, Chi-Ching Liu, Wei-Chih Lai, Yung-Chiang Lan, Yun-Chorng Chang

Summary: The study demonstrates the ability to exclude thermal effects and detect non-thermal hot carriers generated by surface plasmons using an AlGaN/GaN transistor. This ultra-sensitive platform shows at least two orders of magnitude more sensitivity compared to previous reports, offering a new way to optimize plasmonic nanoantenna design in various applications.

ADVANCED SCIENCE (2021)

Add to Collection

Article Physics, Applied

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Ding Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi

Summary: In this Letter, fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (HEMTs) were demonstrated using molecular beam epitaxy. The fabricated ferroelectric gate HEMTs showed counterclockwise hysteretic transfer curves with a wide threshold voltage tuning range, a large ON/OFF ratio, and reconfigurable output characteristics. The high quality ferroelectric gate stack and effective ferroelectric polarization coupling lead to improved subthreshold performance. These results provide fundamental insight into the ferroelectric polarization coupling and threshold tuning processes in ferroelectric nitride heterostructures and have promising applications in next-generation electronics.

APPLIED PHYSICS LETTERS (2023)

Add to Collection

Article Physics, Applied

Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Mohammad Wahidur Rahman, Nidhin Kurian Kalarickal, Hyunsoo Lee, Towhidur Razzak, Siddharth Rajan

Summary: In this study, AlGaN/GaN HEMTs integrated with high permittivity BaTiO3 dielectric were discussed to enhance the breakdown characteristics. The use of high permittivity BaTiO3 dielectric layers prevented premature gate breakdown and enabled higher breakdown fields, leading to devices with high power figure of merit. This work demonstrates that electrostatic engineering with high-permittivity dielectrics can push AlGaN/GaN HEMTs closer to material breakdown field limits.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Article Physics, Applied

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

Mei Ge, Yi Li, Youhua Zhu, Dunjun Chen, Zhiliang Wang, Shuxin Tan

Summary: The improved e-mode AlGaN/GaN HEMT with a gate stack beta-Ga2O3/p-GaN structure outperforms the conventional p-GaN gate HEMT, mainly due to the use of the beta-Ga2O3 layer which reduces the electric field strength in the gate region and decreases off-state leakage current. Additionally, there is a trade-off between the thickness of the beta-Ga2O3 layer and the performance of the device.

JOURNAL OF APPLIED PHYSICS (2021)

Add to Collection

Article Physics, Applied

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

Tsung-Han Yang, Jesse Brown, Kai Fu, Jingan Zhou, Kevin Hatch, Chen Yang, Jossue Montes, Xin Qi, Houqiang Fu, Robert J. Nemanich, Yuji Zhao

Summary: In this study, AlGaN/GaN MISHEMTs were fabricated on Si substrates with a BN gate dielectric layer, showing excellent performance characteristics and low interface state density. The characterization of the BN/GaN interface was conducted using XPS and UV photoelectron spectroscopy, revealing a bandgap of approximately 5eV consistent with sp(2) bonding. Investigation into gate leakage current mechanisms showed Poole-Frenkel emission and Fowler-Nordheim tunneling as dominant mechanisms at low and high electric fields, respectively, through the BN gate dielectric.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Article Nanoscience & Nanotechnology

Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications

Seokho Moon, Sung-Jae Chang, Youngjae Kim, Odongo Francis Ngome Okello, Jiye Kim, Jaewon Kim, Hyun-Wook Jung, Ho-Kyun Ahn, Dong-Seok Kim, Si-Young Choi, JaeDong Lee, Jong-Won Lim, Jong Kyu Kim

Summary: This study successfully demonstrated the realization of wafer-scale h-BN van der Waals heterostructure on a 2 in. AlGaN/GaN high-electron mobility transistor (HEMT) wafer using metal-organic chemical vapor deposition, showing promising performance of the fabricated HEMT with h-BN. Advanced microscopic and spectroscopic analyses along with theoretical calculations revealed an atomically sharp heterointerface with very weak van der Waals interaction between the approximately 2.5 nm-thick h-BN and AlGaN layers. These findings pave the way for practical implementation of 2D materials integrated with conventional microelectronic devices, leading towards the realization of future all-2D electronics.

ACS APPLIED MATERIALS & INTERFACES (2021)

Add to Collection

Article Materials Science, Coatings & Films

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Stefan Schmult, Pascal Appelt, Claudia Silva, Steffen Wirth, Andre Wachowiak, Andreas Grosser, Thomas Mikolajick

Summary: Inconsistencies in the concentrations of unintentional donor impurities and free charge carriers in GaN/AlGaN layer stacks containing a two-dimensional electron gas (2DEG) can be explained by the measurement procedure and the method of extracting the free charge carrier concentration. When the 2DEG acts as the bottom electrode in capacitance versus voltage measurements, unphysically low concentrations of free charges are calculated due to the depletion of the 2DEG and the disappearance of the bottom electrode. It is shown that, for the case of a defined (non-vanishing) bottom electrode, the levels of donor impurities and resulting free charges consistently match.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2023)

Add to Collection

Article Physics, Multidisciplinary

Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor*

Si-De Song, Su-Zhen Wu, Guo-Zhu Liu, Wei Zhao, Yin-Quan Wang, Jian-Wei Wu, Qi He

Summary: In this study, the degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor were extensively analyzed under different stress conditions. The results showed that the device exhibited different electrical characteristics under various stress conditions, indicating excellent performance under reverse gate bias stress. These findings are significant in guiding process optimization towards a high voltage and highly reliable enhanced AlGaN/GaN high-electron mobility transistor.

CHINESE PHYSICS B (2021)

Add to Collection

Article Materials Science, Multidisciplinary

p-GaN Selective Nitridation to Obtain a Normally Off p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors

Shaoqian Lu, Guohao Yu, Yingfei Sun, Xu Yuan, Zhongkai Du, Bingliang Zhang, Lu Wang, Yu Li, Dongdong Wu, Zengli Huang, Zhongming Zeng, Xulei Qin, Baoshun Zhang

Summary: In this article, a method of nitrogen plasma treatment is proposed to achieve normally off p-GaN/AlGaN/GaN high-electron-mobility transistors, and the related mechanism is proposed. The nitrogen plasma treatment depletes holes in the p-GaN layer and changes the surface characteristics, resulting in the formation of a 2D electron gas at the AlGaN/GaN interface. The device shows enhanced performance with improved threshold voltage, on/off ratio, and maximum drain current.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2023)

Add to Collection

Article Nanoscience & Nanotechnology

Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer

Anwar Siddique, Raju Ahmed, Jonathan Anderson, Mark Holtz, Edwin L. Piner

Summary: The study demonstrates the in situ metal-organic chemical vapor deposition growth of SiNx passivation layers on AlGaN/GaN HEMTs, showing that higher SiNx growth rates can lead to faster lateral coverage and coalescence of initial SiNx islands, thereby suppressing SiH4-induced III-nitride etching. The SiNx stoichiometry can be optimized to reduce strain relaxation in the barrier layer and achieve near-ideal AlGaN/AlN/GaN interfaces, ultimately improving electron mobility and electrical properties of the HEMTs under optimized conditions.

ACS APPLIED MATERIALS & INTERFACES (2021)

Add to Collection

Article Physics, Applied

UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping

Markus Wohlfahrt, Michael J. Uren, Felix Kaess, Oleg Laboutin, Hassan Hirshy, Martin Kuball

Summary: AlGaN/GaN High Electron Mobility Transistors (HEMTs) exhibit a UV-induced persistent photoconductivity (PPC) effect, which is related to changes in electronic band bending in the buffer layer. This effect is significant only in p-type buffers and allows for quantification of deep-level doping density, with recovery times extending to several days.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Article Chemistry, Analytical

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Meng Zhang, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao

Summary: AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were studied. The top gate control in TGN-devices resulted in larger transconductance peak, current gain cut-off frequency, and power gain cut-off frequency compared to the DGN-devices. Decreasing the nanochannel width increased the transconductance peak and derivatives, indicating the significant influence of sidewall gate capacitance on the transconductance and linearity. The gate capacitance of the tri-gate structure was not a linear combination of the top planar gate capacitance and sidewall gate capacitance of the dual-gate structure due to the difference in depletion region shape.

MICROMACHINES (2023)

Add to Collection

Article Nanoscience & Nanotechnology

Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide-Bandgap Electronics

Yi-Yu Zhang, Shu An, Yixiong Zheng, Junyu Lai, Jung-Hun Seo, Kwang Hong Lee, Munho Kim

Summary: This study demonstrates a novel method for transferring flexible AlGaN/GaN HEMTs from insulating substrates to flexible ones, achieving good electrical performance and piezoelectric behavior. Mechanical bending can further enhance the performance of AlGaN/GaN HEMTs. The results show great potential for this device in next-generation flexible electronics applications.

ADVANCED ELECTRONIC MATERIALS (2022)

Add to Collection

Article Physics, Applied

Investigation of proton irradiation induced EC-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Pengfei Wan, Weiqi Li, Xiaodong Xu, Yadong Wei, Hao Jiang, Jianqun Yang, Guojian Shao, Gang Lin, Chao Peng, Zhangang Zhang, Xingji Li

Summary: Electron traps in AlGaN/GaN high electron mobility transistors were studied using theoretical and experimental methods. Energy levels at E-C-0.9 eV due to irradiation were identified using deep-level transient spectroscopy (DLTS). Two electron traps, H1 (E-C-0.63 eV) and H-2 (E-C-0.9 eV), were observed in the DLTS spectra. H1 was generated during device or material manufacturing, while H2 was caused by displacement damage. Furthermore, it was found that the H2 signal peak can be attributed to three defects, H2-1, H2-2, and H2-3, with energies E-C-0.77 eV, E-C-0.9 eV, and E-C-0.98 eV, respectively. Different configurations of di-nitrogen vacancy structures were identified as the source of the E-C-0.77 eV and E-C-0.9 eV signals based on defect migration temperature and first principles calculations. The E-C-0.98 eV defect was more stable at high temperatures, possibly related to gallium vacancy.

APPLIED PHYSICS LETTERS (2022)

Add to Collection

Article Physics, Applied

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael A. Mastro, Neeraj Nepal, Jeffrey M. Woodward, Rachael L. Myers-Ward, Evan R. Glaser, Jaime A. Freitas, Alan G. Jacobs, James C. Gallagher, Alyssa L. Mock, Daniel J. Pennachio, Jenifer Hajzus, Mona Ebrish, Travis J. Anderson, Karl D. Hobart, Jennifer K. Hite, Charles R. Eddy Jr.

Summary: Gallium oxide as an ultra-wide bandgap semiconductor shows significant potential in advancing power electronic devices due to its high breakdown electric field and mature substrate technology. However, a key challenge remains in growing electronic-grade epitaxial layers at rates consistent with the thickness needed for high voltage technologies. This study reports on the characterization of epitaxial layers grown at relatively high rates, showing improved quality and potential for future high voltage power device technologies.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)

Add to Collection

Article Physics, Applied

Site control of quantum emitters in gallium nitride by polarity

Minh Anh Phan Nguyen, Jennifer Hite, Michael A. Mastro, Mehran Kianinia, Milos Toth, Igor Aharonovich

Summary: This study investigates the nature of quantum emitters in GaN grown on samples with different growth orientations, revealing consistent formation of quantum emitters in Ga-polar regions. Findings shed light on the origins of these quantum emitters and demonstrate site-selective formation in GaN. Through various tests, the overall defectivity of Ga-polar GaN synthesized using a specific growth procedure is attributed to the formation of quantum emitters.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Article Materials Science, Coatings & Films

Assessment of the (010) β-Ga2O3 surface and substrate specification

Michael A. Mastro, Charles R. Eddy, Marko J. Tadjer, Jennifer K. Hite, Jihyun Kim, Stephen J. Pearton

Summary: Recent advancements in bulk crystal growth of beta-Ga2O3 have led to commercialization of large-area substrates and high-quality films on (010) substrates, revealing subnanometer-scale facets and larger ridges on the surface. Recommendations for standardizing substrates to control ridge formation have been proposed based on density function theory calculations.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2021)

Add to Collection

Article Engineering, Electrical & Electronic

Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

A. El-Helou, Y. Cui, M. J. Tadjer, T. J. Anderson, D. Francis, T. Feygelson, B. Pate, K. D. Hobart, P. E. Raad

Summary: The study presents full thermal characterization of GaN power devices with different substrates to manage performance-limiting self-heating by utilizing an innovative reverse modeling approach. It compares the thermal properties of HEMTs on Si, SiC, and Diamond substrates and provides conclusions to guide further developments in GaN HEMT thermal management strategies.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2021)

Add to Collection

Article Engineering, Electrical & Electronic

Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

James C. Gallagher, Travis J. Anderson, Andrew D. Koehler, Mona A. Ebrish, Geoffrey M. Foster, Michael A. Mastro, Jennifer K. Hite, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Francis J. Kub

Summary: This work focuses on fabricating vertical p-i-n GaN diodes using Raman spectroscopy to monitor carrier concentration, discovering that the uniformity of the wafers affects device performance. Avoiding electron-donating defects in the wafers significantly improves rectification ratio and reduces reverse bias leakage current.

JOURNAL OF ELECTRONIC MATERIALS (2021)

Add to Collection

Article Chemistry, Physical

Oxygenation of Diamond Surfaces via Hummer's Method

Anand B. Puthirath, Eliezer F. Oliveira, Guanhui Gao, Nithya Chakingal, Harikishan Kannan, Chenxi Li, Xiang Zhang, Abhijit Biswas, Mahesh R. Neupane, Bradford B. Pate, Dmitry A. Ruzmetov, A. Glen Birdwell, Tony G. Ivanov, Douglas S. Galvao, Robert Vajtai, Pulickel M. Ajayan

Summary: The study found that Hummer's method is very effective in oxidizing pristine diamond surfaces, especially in the presence of strong oxidizing agents. Microcrystalline diamond powder is more prone to oxidation to polycrystalline diamond wafers.

CHEMISTRY OF MATERIALS (2021)

Add to Collection

Article Engineering, Environmental

Nanosecond Transient Absorption of Hydrated Electrons and Reduction of Linear Perfluoroalkyl Acids and Sulfonates

William A. Maza, Vanessa M. Breslin, Jeffrey C. Owrutsky, Bradford B. Pate, Albert Epshteyn

Summary: This study investigates the rate constants and activation energies associated with the reduction of linear perfluoroalkyl carboxylates and perfluoroalkyl sulfonates by hydrated electrons. The results show that the reduction process is diffusion-controlled with no significant differences in activation energies between the two surfactants, despite slightly different rate constants observed.

ENVIRONMENTAL SCIENCE & TECHNOLOGY LETTERS (2021)

Add to Collection

Article Engineering, Environmental

Impact of Submicellar Aggregation on Reduction Kinetics of Perfluorooctanoate by the Hydrated Electron

William A. Maza, Brian D. Etz, Timothy C. Schutt, Brian L. Chaloux, Vanessa M. Breslin, Bradford B. Pate, Manoj K. Shukla, Jeffrey C. Owrutsky, Albert Epshteyn

Summary: Disagreements persist regarding the rate constants for the initial reduction of perfluorooctanoate (PFOA) by the hydrated electron, eaq-. In this study, a nonlinear dependence of the eaq- decay rate on the PFOA concentration is demonstrated, which is attributed to the aggregation of PFOA below the critical micellar concentration. A kinetic model is proposed to explain the reaction between PFOA and eaq- at low concentrations, and the model adequately fits the experimental data. The results suggest that the aggregation of PFOA decreases the probability of its reduction by eaq-.

ENVIRONMENTAL SCIENCE & TECHNOLOGY LETTERS (2022)

Add to Collection

Article Materials Science, Multidisciplinary

Mg-Facilitated Growth of Cubic Boron Nitride by Ion Beam-Assisted Molecular Beam Epitaxy

David F. Storm, Sergey Maximenko, Andrew C. Lang, Neeraj Nepal, Tatyana Feygelson, Bradford B. Pate, Chaffra A. Affouda, David J. Meyer

Summary: Trace amounts of Mg deposited on a diamond (100) substrate surface assist in the growth of cubic boron nitride (c-BN) through ion beam-assisted molecular beam epitaxy. Films grown with Mg exhibit primarily cubic structures, with a high density of stacking faults and twinning observed in high-resolution scanning transmission electron microscopy.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2022)

Add to Collection

Article Materials Science, Coatings & Films

Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition

Jeffrey M. Woodward, Samantha G. Rosenberg, David R. Boris, Michael J. Johnson, Scott G. Walton, Scooter D. Johnson, Zachary R. Robinson, Neeraj Nepal, Karl F. Ludwig Jr, Jennifer K. Hite, Charles R. Eddy Jr

Summary: Plasma-enhanced atomic layer deposition (PEALD) enables the epitaxial growth of ultrathin indium nitride (InN) films with reduced process temperatures and better control of layer thickness. The relationship between plasma properties and growth kinetics is crucial for optimizing growth parameters. In this study, in situ investigation using grazing incidence small-angle x-ray scattering (GISAXS) reveals that the production of nitrogen species in the plasma influences the growth mode, with high concentrations promoting island growth and low concentrations promoting layer-plus-island growth. The results demonstrate the potential to control the growth kinetics of epitaxial films during PEALD by manipulating specific plasma species generation regimes.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2022)

Add to Collection

Article Materials Science, Multidisciplinary

Novel Codoping Moiety to Achieve Enhanced P-Type Doping in GaN by Ion Implantation

Alan G. Jacobs, Joseph A. Spencer, Jennifer K. Hite, Karl D. Hobart, Travis J. Anderson, Boris N. Feigelson

Summary: Codoping of gallium nitride with magnesium and silicon or oxygen via ion implantation and symmetric multicycle rapid thermal annealing is demonstrated. The results show enhanced photoluminescence, especially with oxygen codoping. The addition of nitrogen helps to balance stoichiometry and suppress defect photoluminescence signals. These findings have important implications for device design and the future use of ion implantation.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2023)

Add to Collection

Review Crystallography

A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices

Jennifer K. Hite

Summary: This paper reviews the basic issues in homoepitaxial growth of III-nitrides for vertical device technology. It focuses on using MOCVD to grow GaN and explores the effects of native substrate characteristics on material quality and device performance. The review also includes theoretical understanding of dopants in AlN and BN for future expansion into these materials.

CRYSTALS (2023)

Add to Collection

Article Crystallography

Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

Alan G. G. Jacobs, Boris N. N. Feigelson, Joseph A. A. Spencer, Marko J. J. Tadjer, Jennifer K. K. Hite, Karl D. D. Hobart, Travis J. J. Anderson

Summary: Selective area doping is crucial for modern devices. In this study, efficient silicon ion activation in GaN was achieved through symmetrical multicycle rapid thermal annealing. The activation efficiency and mobility improved with increasing annealing temperature. The results demonstrate efficient dopant activation with low unintentional doping, making it suitable for high-voltage, high-power devices. Additionally, high activation and mobility have been achieved with GaN on sapphire, which offers commercial potential due to its large-area and robust substrates.

CRYSTALS (2023)

Add to Collection

Article Microscopy

Methodology and implementation of a tunable deep-ultraviolet laser source for photoemission electron microscopy

Andrew J. Winchester, Travis J. Anderson, Jennifer K. Hite, Randolph E. Elmquist, Sujitra Pookpanratana

Summary: Photoemission electron microscopy (PEEM) is a powerful tool for studying electronic properties. Traditionally, it was mainly used with synchrotron light sources, but recent advancements in solid-state lasers have allowed for the development of laboratory-based PEEMs using laser-based UV light. This study reports on the characteristics of a laser-based UV light source integrated with a PEEM instrument and highlights the improved image quality compared to conventional light sources.

ULTRAMICROSCOPY (2023)

Add to Collection

Proceedings Paper Engineering, Electrical & Electronic

Plasma -free Anisotropic Etching of GaN

Clarence Y. Chan, Shunya Namiki, Jennifer K. Hite, Xiuling Li

Summary: In this study, photo-enhanced metal-assisted chemical etching was demonstrated on homoepitaxial n-UaN on HVPE GaN substrates. The etch rate achieved was comparable to or better than using RIE, with no degradation in band-edge emission observed.

2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) (2021)

Add to Collection

No Data Available

© Peeref 2019-2024. All rights reserved.