Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 213, Issue 6, Pages 1572-1576Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201532831
Keywords
adhesion; electron microscopy; magnetic field; metal-assisted chemical etching; nanowires; silicon
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science, and Technology [NRF-2013R1A1A2065935]
- Korea Evaluation Institute of Industrial Technology (KEIT) - Korea government (MOTIE) [10052824]
- Institute for Information & communications Technology Promotion (IITP) - Korea government (MSIP) [R6913-15-0001]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10052824] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Public Safety & Security (MPSS), Republic of Korea [R6913-15-0001] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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High aspect ratio silicon nanowires (Si NWs) are produced by metal-assisted chemical etching (MacEtch) combined with a magnetic field. The vertically applied magnetic field enhances the adhesion between a catalytic metal film and a semiconductor surface. As a result, very uniform Si NWs are formed with increased etch rate due to an easy transfer of holes from metal to Si. Importantly, the porosity of the Si NWs is dramatically reduced by an applied magnetic field because the metal film quickly sinks into the Si, thereby decreasing the excess hole diffusion from the NW sidewall. The combined process of MacEtch and a magnetic field is a promising approach to form high aspect ratio Si NWs with minimized etching damage. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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