Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 76, Issue -, Pages 140-145Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2015.10.022
Keywords
AlGaN/GaN; Multi-quantum well; Deformation state; Piezoelectric field; Photoluminescence; X-ray diffraction
Funding
- National Academy of Sciences of Ukraine within the state program Nanotechnology and Nanomaterials
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The influence of strain and barrier/well thickness ratio on recombination processes in multi-quantum well (MQW) Al0.1Ga0.9N/GaN structures was investigated using X-ray diffraction and Raman and photoluminescence spectroscopies. The deformation state of the wells and barriers was determined. In addition, the value of the polarization fields, the density of polarization charges, and the positions of energy levels for optical transitions within the quantum wells were calculated. It was established that compressive strain in the buffer layer as well as in the layers of the MQWs with respect to the buffer layer lead to the piezoelectric fields having equal sign in the well and the barrier. As a result, the recombination of donor-acceptor pairs dominates over transitions between electron and hole states in the quantum well. (C) 2015 Elsevier B.V. All rights reserved.
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