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Title
On the multiferroic skyrmion-host GaV4S8
Authors
Keywords
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Journal
PHILOSOPHICAL MAGAZINE
Volume 97, Issue 36, Pages 3428-3445
Publisher
Informa UK Limited
Online
2016-11-10
DOI
10.1080/14786435.2016.1253885
References
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Related references
Note: Only part of the references are listed.- Néel-type skyrmion lattice with confined orientation in the polar magnetic semiconductor GaV4S8
- (2015) I. Kézsmárki et al. NATURE MATERIALS
- Jahn-Teller distortions as a novel source of multiferroicity
- (2015) Paolo Barone et al. PHYSICAL REVIEW B
- Unusual ferroelectricity induced by the Jahn-Teller effect: A case study on lacunar spinel compounds
- (2015) Ke Xu et al. PHYSICAL REVIEW B
- Polar Dynamics at the Jahn-Teller Transition in FerroelectricGaV4S8
- (2015) Zhe Wang et al. PHYSICAL REVIEW LETTERS
- Electronic properties of GaV4S8: A percolation approach
- (2015) I NAIK et al. PRAMANA-JOURNAL OF PHYSICS
- Multiferroicity and skyrmions carrying electric polarization in GaV4S8
- (2015) E. Ruff et al. Science Advances
- First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D SystemGaTa4Se8
- (2014) A. Camjayi et al. PHYSICAL REVIEW LETTERS
- Orbital-Ordering-Driven Multiferroicity and Magnetoelectric Coupling inGeV4S8
- (2014) Kiran Singh et al. PHYSICAL REVIEW LETTERS
- Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators
- (2013) Pablo Stoliar et al. ADVANCED MATERIALS
- Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8
- (2013) Vincent Dubost et al. NANO LETTERS
- Optical Conductivity Measurements ofGaTa4Se8Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition
- (2013) V. Ta Phuoc et al. PHYSICAL REVIEW LETTERS
- Avalanche breakdown in GaTa4Se8−xTe x narrow-gap Mott insulators
- (2013) V. Guiot et al. Nature Communications
- Observation of Skyrmions in a Multiferroic Material
- (2012) S. Seki et al. SCIENCE
- Spontaneous atomic-scale magnetic skyrmion lattice in two dimensions
- (2011) Stefan Heinze et al. Nature Physics
- Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories
- (2010) Laurent Cario et al. ADVANCED MATERIALS
- Colossal dielectric constants in transition-metal oxides
- (2010) P. Lunkenheimer et al. European Physical Journal-Special Topics
- Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8
- (2010) Eugen Dorolti et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Real-space observation of a two-dimensional skyrmion crystal
- (2010) X. Z. Yu et al. NATURE
- Skyrmion Lattice in a Chiral Magnet
- (2009) S. Muhlbauer et al. SCIENCE
- Thermodynamic properties of ferromagnetic Mott-insulator GaV4S8
- (2007) C.S. Yadav et al. PHYSICA B-CONDENSED MATTER
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