Ion-gel gated field-effect transistors with solution-processed oxide semiconductors for bioinspired artificial synapses

Published 2016 View Full Article

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Title
Ion-gel gated field-effect transistors with solution-processed oxide semiconductors for bioinspired artificial synapses
Authors
Keywords
Ion-gel, Amorphous indium-zinc-oxide, Field-effect transistors, Artificial synapse
Journal
ORGANIC ELECTRONICS
Volume 39, Issue -, Pages 64-70
Publisher
Elsevier BV
Online
2016-09-30
DOI
10.1016/j.orgel.2016.09.029

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