Al 2 O 3 /TiO 2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors

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Title
Al 2 O 3 /TiO 2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
Authors
Keywords
Organic field-effect transistors (OFETs), Gate dielectrics, Nanolaminate, Dielectric constant, Leakage current
Journal
ORGANIC ELECTRONICS
Volume 28, Issue -, Pages 139-146
Publisher
Elsevier BV
Online
2015-11-11
DOI
10.1016/j.orgel.2015.10.025

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