Inkjet printable and low annealing temperature gate-dielectric based on polymethylsilsesquioxane for flexible n-channel OFETs

Title
Inkjet printable and low annealing temperature gate-dielectric based on polymethylsilsesquioxane for flexible n-channel OFETs
Authors
Keywords
Spin-on-glass, Inkjet printable dielectric, Low annealing temperature, Flexible n-channel transistors, Low leakage current and high breakdown voltage
Journal
ORGANIC ELECTRONICS
Volume 30, Issue -, Pages 213-218
Publisher
Elsevier BV
Online
2016-01-08
DOI
10.1016/j.orgel.2015.12.023

Ask authors/readers for more resources

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started