4.6 Article

High-brightness semipolar (20(21)over-bar) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications

Journal

OPTICS LETTERS
Volume 41, Issue 11, Pages 2608-2611

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OL.41.002608

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Funding

  1. King Abdullah University of Science and Technology (KAUST) [KAUST BAS/1/1614-01-01]
  2. King Abdulaziz City for Science and Technology (KACST) [KACST TIC R2-FP-008]

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A high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (20 (21) over bar) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW. A peak optical power of 256 mW was achieved at 700 mA CW injection current. By combining YAG:Ce phosphor, SLD-generated white light shows a color-rendering index (CRI) of 68.9 and a correlated color temperature (CCT) of 4340 K. The measured frequency response of the SLD revealed a -3 dB bandwidth of 560 MHz, thus demonstrating the feasibility of the device for both solid-state lighting (SSL) and visible-light communication (VLC) applications. (C) 2016 Optical Society of America

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