Design and fabrication of AlGaInP-based micro-light-emitting-diode array devices

An integrated high-resolution (individual pixel size 80 mu m x 80 mu m) solid-state self-emissive active matrix programmed with 320 x 240 micro-light-emitting-diode arrays structure was designed and fabricated on an AlGaInP semiconductor chip using micro electro-mechanical syStems, microstructure and semiconductor fabricating techniques. Row pixels share a p-electrode and line pixels share an n-electrode. We experimentally investigated GaAs substrate thickness affects the electrical and optical characteristics of the pixels. For a 150-mu m-thick GaAs substrate, the single pixel output power was 167.4 mu W at 5 mA, and increased to 326.411 mu W when current increase to 10 mA. The device investigated potentially plays an important role in many fields. (C) 2015 Elsevier Ltd. All rights reserved.