Journal
CHEMICAL PHYSICS LETTERS
Volume 638, Issue -, Pages 103-107Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2015.08.035
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Funding
- National Nature Science Foundation of China [61350007]
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Resistive switching memory effect in metal-oxide-metal structures is a fascinating phenomenon toward next generation universal nonvolatile memories. Herein, the MoSe2 nanorods were prepared by hydrothermal method. Further, a resistive switching memory device of single MoSe2 nanorods is demonstrated. The device presents stable resistive switching memory behaviors with on-off ratio (memory window) of similar to 50 at room temperature. Moreover, the origin of switching behavior in these devices on the basis of formation and annihilation of conducting filaments is addressed. This study is useful for exploring the multifunctional materials and their applications in nonvolatile memory devices. (C) 2015 Elsevier B.V. All rights reserved.
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