Article
Nanoscience & Nanotechnology
Wenhui Du, Rui Peng, Zhonglin He, Ying Dai, Baibiao Huang, Yandong Ma
Summary: In this study, a general design principle for achieving the AVH effect in antiferromagnetic monolayers is proposed through model analysis and first-principles calculations. The design principle is validated by stacking antiferromagnetic monolayer MnPSe3 on ferroelectric monolayer Sc2CO2. This research contributes to the exploration of AVH effect.
NPJ 2D MATERIALS AND APPLICATIONS
(2022)
Article
Materials Science, Multidisciplinary
Yingmei Zhu, Qirui Cui, Yonglong Ga, Jinghua Liang, Hongxin Yang
Summary: Besides charge and spin, the valley index is another degree of freedom that can be used as an information carrier. This study focuses on inducing and regulating valley polarization using ferrovalley materials. The A-type antiferromagnetic VSe2/CrI3 heterostructure is found to exhibit perpendicular magnetic anisotropy and spontaneous valley polarization, while the magnetic anisotropy of VSe2 is in-plane. Additionally, a multiferroic heterostructure In2Se3/VSe2/CrI3 is built to achieve electric-field-controlled valley states.
Article
Materials Science, Multidisciplinary
Makoto Naka, Yukitoshi Motome, Hitoshi Seo
Summary: In this study, the anomalous Hall effect (AHE) in perovskites with antiferromagnetic (AFM) orderings was theoretically investigated. The results showed that AFM ordered states in perovskite materials can exhibit AHE, with different forms depending on the electron orbital filling.
Article
Physics, Multidisciplinary
Jin Cao, Wei Jiang, Xiao-Ping Li, Daifeng Tu, Jiadong Zhou, Jianhui Zhou, Yugui Yao
Summary: An unconventional anomalous Hall effect (IPAHE) induced by an in-plane magnetic field is discovered in PT-symmetric antiferromagnetic systems. This effect is demonstrated in known AFM materials and a new kind of AFM heterodimensional superlattice, showing potential for applications in AFM spintronic devices. Experimental detection methods are briefly discussed.
PHYSICAL REVIEW LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Hongyu Chen, Zexin Feng, Han Yan, Peixin Qin, Xiaorong Zhou, Huixin Guo, Xiaoning Wang, Haojiang Wu, Xin Zhang, Ziang Meng, Zhiqi Liu
Summary: Unexpected weak anomalous Hall effect was found in polycrystalline thin films of chromium, possibly attributed to noncollinear spin textures induced by local spin frustration and rearrangement. A dominant intrinsic Berry phase mechanism is speculated. This may be a general feature for collinear antiferromagnetic thin-film materials with moderately high defect concentrations, making them promising candidates for emergent antiferromagnetic spintronics.
Article
Chemistry, Physical
J. J. Lu, R. Liu, F. F. Yue, X. W. Zhao, G. C. Hu, X. B. Yuan, J. F. Ren
Summary: Through first-principles calculations, we have discovered a two-dimensional MXene material, Y3N2O2, with spontaneous valley polarization (VP) that induces intrinsic anomalous valley Hall effect (AVHE). The VP can be linearly modulated, providing an effective control route for valley signals. By adjusting spin-orbit coupling, we have enhanced the VP in the proposed monolayer La3N2O2 to 100.4 meV, enabling easy achievement of AVHE. This work not only offers compelling AVHE material candidates but also presents a novel mindset for finding suitable valleytronic devices.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Yuhan Liang, Liang Wu, Minyi Dai, Yujun Zhang, Qinghua Zhang, Jie Wang, Nian Zhang, Wei Xu, Le Zhao, Hetian Chen, Ji Ma, Jialu Wu, Yanwei Cao, Di Yi, Jing Ma, Wanjun Jiang, Jia-Mian Hu, Ce-Wen Nan, Yuan-Hua Lin
Summary: In this paper, an unconventional high-temperature anomalous Hall effect is observed in heavy metal/antiferromagnetic insulator heterostructures. This effect only occurs around the Neel temperature of the antiferromagnetic insulator and exhibits a large anomalous Hall resistivity up to 40 n omega cm. It is attributed to the emergence of a noncollinear antiferromagnetic spin texture with a nonzero net topological charge, which can be stabilized by the interplay among the collinear antiferromagnetic exchange coupling, interfacial Dyzaloshinski-Moriya interaction, thermal fluctuation, and bias magnetic field.
Article
Chemistry, Multidisciplinary
Jie Chen, Hang Li, Bei Ding, Peng Chen, Tengyu Guo, Xing Xu, Dongfeng Zheng, Hongwei Zhang, Xuekui Xi, Wenhong Wang
Summary: The study found a large unconventional anomalous Hall signal in DyPtBi, with even larger effects observed at certain angles. Furthermore, DyPtBi achieved a giant planar anomalous Hall angle of up to 30%, indicating that this material is a good platform for investigating unconventional AHE and other novel physical properties.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Kang Jia, Xiao-Jing Dong, Sheng-Shi Li, Wei-Xiao Ji, Chang-Wen Zhang
Summary: Topology and ferrovalley (FV) are important concepts in emerging device applications and fundamental research. However, the coupling between FV and topology in a single system is rarely reported. In this study, stable intrinsic FV ScBrI semiconductor with high Curie temperature (TC) is predicted using Monte Carlo simulations and first-principles calculations. Strain engineering can induce transitions from FV to half-valley-metal (HVM), to valley-nonequilibrium quantum anomalous Hall effect (VQAHE), to HVM, and back to FV. No specific valley polarization and VQAHE states are observed under in-plane (IP) magnetic anisotropy.
Article
Materials Science, Multidisciplinary
Thi Phuong Thao Nguyen, Kunihiko Yamauchi
Summary: In this paper, the anomalous Hall effect in the perovskite CaCrO3 is studied as a representative of collinear antiferromagnetic materials. It is found that the C-type antiferromagnetic ordering generates a sizable anomalous Hall conductivity. The enhanced effect is attributed to the spin splitting of Cr-3d bands induced by spin-orbit coupling near the Fermi energy.
Article
Materials Science, Multidisciplinary
Bin Wu, Yong-liang Song, Wei-xiao Ji, Pei-ji Wang, Shu-feng Zhang, Chang-wen Zhang
Summary: Through first-principles calculations, we find that the monolayer of MoO is an antiferromagnetic material that can be tuned to be a quantum anomalous Hall insulator with a band gap of 50 meV. The stability of the tetragonal lattice structure of MoO is confirmed using phonon spectrum and molecular dynamics simulation. It exhibits a collinear antiferromagnetic order with magnetic moments larger than 2 μB on each Mo atom. Tensile strain induces a metal-insulator phase transition, while shear strain breaks the effective time-reversal symmetry and leads to nontrivial electronic bands with Chern number C = -1. Additionally, it has a Neel temperature that could be higher than room temperature, providing potential applications in spintronic devices.
Article
Materials Science, Multidisciplinary
A. C. Duran, S. A. Osorio, M. B. Sturla
Summary: We studied the anomalous Hall effect on the antiferromagnetic coloring-triangular lattice with spin-orbit interaction. Our results show that a finite Hall conductivity occurs in the planar 120° structure with finite spin-orbit coupling, and a quantized Hall conductivity appears at global band gaps resulting from a topologically nontrivial band structure.
Article
Chemistry, Multidisciplinary
Shuo Li, Thomas Frauenheim, Junjie He
Summary: It is theoretically feasible to detect and manipulate the valley degree of freedom in two-dimensional hexagonal lattices with both inversion asymmetry and time-reversal symmetry. Surface functionalization can induce intrinsic ferrovalley polarization in MXenes, and the presence of spin-orbital coupling ensures their time-reversal symmetry. Through chemical engineering of functionalization, the structure-property relationship in 2D layers can be tuned to achieve desirable spin-valley coupling. This theoretical insight provides a new opportunity for valleytronics and spintronics.
Article
Chemistry, Physical
Yongcheng Deng, Runze Li, Xionghua Liu
Summary: Research shows that even thin Mn3Sn films as thin as 20 nm exhibit a significant anomalous Hall effect, which varies depending on the relative crystalline structure of different thickness samples. Additionally, a phase diagram of the AHE in Mn3Sn films annealed at different temperatures with different thicknesses was obtained, and current-induced antiferromagnetic state switching was achieved in Mn3Sn (20 nm) / Pt (4 nm) samples. These findings could potentially advance the development of antiferromagnetic spintronics.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Materials Science, Multidisciplinary
Wenxuan Zhu, Cheng Song, Hua Bai, Liyang Liao, Feng Pan
Summary: This study proposes a method to regulate the Chern number of the quantum anomalous Hall effect by utilizing the variable stacking order inherent in vdW materials through first-principles calculations. In the 2D limit, interlayer stacking order can influence the topological properties, enabling tunable High Chern number QAHE.