Journal
NANOTECHNOLOGY
Volume 27, Issue 24, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/24/245203
Keywords
quantum dot; QD-LEDs; partial ligand exchange; benzenethiol
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [NRF-2015R1A2A2A01003520]
- Ministry of Science, ICT and Future Planning (MSIP), Korea, under the Information Technology Research Center (ITRC) support program [IITP-2016-H8501-16-1009]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2015R1A6A1A03031833]
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In this study, benzenethiol ligands were applied to the surface of CdSe@ZnS core@shell quantum dots (QDs) and their effect on the performance of quantum dot light-emitting diodes (QD-LEDs) was investigated. Conventional long-chained oleic acid (OA) and trioctylphosphine (TOP) capping ligands were partially replaced by short-chained benzenethiol ligands in order to increase the stability of QDs during purification and also improve the electroluminescence performance of QD-LEDs. The quantum yield of the QD solution was increased from 41% to 84% by the benzenethiol ligand exchange. The mobility of the QD films with benzenethiol ligands approximately doubled to 2.42 x 10(-5) cm(2) V-1 s(-1) from 1.19 x 10(-5) cm(2) V-1 s(-1) compared to the device consisting of OA/TOP-capped QDs, and an approximately 1.8-fold improvement was achieved over QD-LEDs fabricated with bezenethiol ligand-exchanged QDs with respect to the maximum luminance and current efficiency. The turn-on voltage decreased by about -0.6 V through shifting the energy level of the QDs with benzenethiol ligands compared to conventional OA and TOP ligands.
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