Journal
NANOSCALE
Volume 8, Issue 1, Pages 342-347Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr05078b
Keywords
-
Categories
Funding
- National Basic Research Program [2013CB632105]
- National Natural Science Foundation of China [61275045, 61575191]
Ask authors/readers for more resources
We explore an easy method for preparation of a hybrid device of a photonic crystal InGaN/GaN quantum well (QW) and colloidal quantumdots using conventional photolithography. It is demonstrated from electroluminescence spectra that Forster resonance energy transfer takes place efficiently between the photonic crystal InGaN/GaN QW and CdSe/ZnS colloidal quantum dots. From the photoluminescence decay of the InGaN/GaN QW, the largest Forster resonance energy transfer efficiency between the photonic crystal GaN quantum well and colloidal quantum dots is measured as 88% and the corresponding Forster-resonance-energy- transfer fraction reached 42%. An easy approach is explored to realize a highly efficient electrically driven colloidal quantum dot device using the Forster-resonance-energy-transfer mechanism.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available