Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?

Structural Dependences of Localization and Recombination of Photogenerated Carriers in the top GaInP Subcells of GaInP/GaAs Double-Junction Tandem Solar Cells

(2014) Zhuo Deng et al.   ACS Applied Materials & Interfaces

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

(2014) Zhi Li et al.   JOURNAL OF APPLIED PHYSICS

Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

(2014) Frank Dimroth et al.   PROGRESS IN PHOTOVOLTAICS

Image transport through a disordered optical fibre mediated by transverse Anderson localization

(2014) Salman Karbasi et al.   Nature Communications

Polarized and non-polarized photoluminescence of GaInP2 alloy with partial CuPt-type atomic ordering: ordered domains vs. disordered regions

(2014) J. Q. Ning et al.   Journal of Materials Chemistry C

Radiative recombination of carriers in the GaxIn1−xP/GaAs double-junction tandem solar cells

(2013) Z. Deng et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Observation of transverse Anderson localization in an optical fiber

(2012) Salman Karbasi et al.   OPTICS LETTERS

Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes

(2011) Suman De et al.   ADVANCED FUNCTIONAL MATERIALS

Fifty years of Anderson localization

(2009) Ad Lagendijk et al.   PHYSICS TODAY

Anderson localization of a non-interacting Bose–Einstein condensate

(2008) Giacomo Roati et al.   NATURE

Direct observation of Anderson localization of matter waves in a controlled disorder

(2008) Juliette Billy et al.   NATURE