Article
Chemistry, Physical
Xiaobing Yan, Hongwei Yan, Gongjie Liu, Jianhui Zhao, Zhen Zhao, Hong Wang, Haidong He, Mengmeng Hao, Zhaohua Li, Lei Wang, Wei Wang, Zixuan Jian, Jiaxin Li, Jingsheng Chen
Summary: This study presents a silicon-based epitaxial ferroelectric memristor with high temperature stability and good durability, which can simulate artificial synaptic behavior and achieve digital recognition.
Article
Chemistry, Physical
Yoonho Ahn, Jong Yeog Son
Summary: Epitaxial BTO/PTO multilayer thin films exhibit ferroelectric polarization switching characteristics with an imprint phenomenon, which can be utilized for developing high-density ferroelectric-based storage media.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Nanoscience & Nanotechnology
Yeong Jae Shin, Juan Jiang, Yichen Jia, Frederick J. Walker, Charles H. Ahn
Summary: BaTiO3 exhibits functional properties like high dielectric constant, large Pockels coefficient, and strong ferroelectricity/piezoelectricity, which can be used for various applications including non-volatile memory devices. Synthesis of BaTiO3 thin films by molecular beam epitaxy allows for growth of coherently strained and ferroelectric BaTiO3 at low temperatures, paving the way for large-scale integration with mainstream electronics platforms. Experimental results demonstrate surface mobility of BaO and TiO2 adatoms conducive to ferroelectric crystal growth at low temperatures.
Article
Physics, Applied
Ang Li, Qinxuan Li, Caihong Jia, Weifeng Zhang
Summary: A study was conducted to distinguish the resistive switching mechanism between ferroelectric polarization switching and the normal resistive switching mechanism such as the drift or charge trapping of defects by growing BaTiO3 (BTO) thin films on a (001) Nb:SrTiO3 single crystal substrate using pulsed laser deposition. It was found that high energy samples with low defect density exhibited resistance hysteresis loops and little current hysteresis loops, while low energy samples with high defect density showed significant resistance and current hysteresis loops simultaneously.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Yuqing Zhou, Changqing Guo, Guohua Dong, Haixia Liu, Ziyao Zhou, Ben Niu, Di Wu, Tao Li, Houbing Huang, Ming Liu, Tai Min
Summary: In this study, zigzag wrinkle morphology was fabricated on inorganic thin films to modulate ferroelectric domains and create a superstructure with periodic surface charge distribution. This unique structure can be switched using strain gradient and provides a means to regulate cells and polar molecules in physiological and bioelectric applications.
Article
Chemistry, Physical
Min Zhang, Chaoyong Deng
Summary: The evolution of dynamic hysteresis with electrical field amplitude and frequency in BTO single crystal films prepared by PLD was systematically investigated. A noticeable transition from low-frequency to high-frequency behavior was observed, with domain motion frequency dependence identified as the cause of the dynamic hysteresis loop scaling behavior.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Nanoscience & Nanotechnology
Kenshi Takada, Shuya Takarae, Kento Shimamoto, Norifumi Fujimura, Takeshi Yoshimura
Summary: The study carefully examines the time-dependent imprint process using Hf0.5Zr0.5O2 (HZO) films with different ferroelectric properties and defect density. It shows that the redistributed charge during polarization retention is affected by the remanent polarization of the ferroelectric layer, with the depolarization field generating and driving charge redistribution. Additionally, correlations between the amount of redistributed charge and dielectric relaxation of HZO films are discussed, indicating that mobile charges contribute to the time-dependent imprint.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Ye Yuan, Yue-Wen Fang, Yi-Feng Zhao, Chun-Gang Duan
Summary: In this study, the combination of piezoelectric ZnO and ferroelectric BaTiO3 is investigated for their ferroelectric behavior and electron transport properties. Different structures of ZnO/BaTiO3 superlattice and their impact on polarization are studied, along with the high tunneling electroresistance effect in different junctions configurations.
Article
Engineering, Electrical & Electronic
Zhenhai Li, Tianyu Wang, Yongkai Liu, Jiajie Yu, Jialin Meng, Pei Liu, Kangli Xu, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen
Summary: In this study, the effects of annealing atmosphere on the ferroelectric property of Al-doped HfO2 ferroelectric tunnel junctions were investigated using first-principles calculations and experiments. The results showed that the ferroelectric layer/electrode interface plays a significant role in the device's ferroelectric performance under different oxygen content annealing atmospheres. The stable o-phase proportion in the HfAlO film, resulting from the presence of Al and oxygen vacancies, was identified as the key element for stable ferroelectric performance. This research could drive the development of HfAlO ferroelectric tunnel junctions for next-generation in-memory computing applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Applied
J. W. Adkins, I. Fina, F. Sanchez, S. R. Bakaul, J. T. Abiade
Summary: In this study, the influence of controllable polarization reversal and built-in electric fields on pyroelectric and electrocaloric effects in a BaTiO3 thin film is examined using a modified indirect method. It is found that the magnitude of the sample's change in polarization with temperature is sensitive to the degree of polarization reversal. The pyroelectric response is small at low fractions of switched polarization and grows larger with higher fractions of reversal. This is attributed to the destabilizing effect of the internal built-in field on low fractions of switched polarization.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Ceramics
Zhe Wang, Jinyan Zhao, Gang Niu, Nan Zhang, Kun Zheng, Yi Quan, Lingyan Wang, Jian Zhuang, Genshui Wang, Xin Li, Henghui Cai, Ming Liu, Zhuangde Jiang, Yulong Zhao, Wei Ren
Summary: In this work, high-quality (0.94-x%)(Bi0.5Na0.5)TiO3-0.06BaTiO3-x%NaNbO3 thin films were successfully deposited on Pt/TiO2/SiO2/Si substrates by sol-gel method. The BNT-6BT-6NN thin films showed an optimized strain response, which is attributed to a synergistic reaction of active domain switching and reversible electric-field-induced phase transition.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2023)
Article
Nanoscience & Nanotechnology
Alberto Rivera-Calzada, Fernando Gallego, Yoav Kalcheim, Pavel Salev, Javier del Valle, Isabel Tenreiro, Carlos Leon, Jacobo Santamaria, Ivan K. Schuller
Summary: Non-volatile memories and memristors are desirable for their fast and non-destructive read out of resistive state. Ferroelectric tunnel junctions (FTJs) with high resistive state ratios are promising for neuromorphic computing. A novel approach utilizing a Schottky barrier for optical sensing of resistive state in FTJs is presented, enabling optical detection of resistive state changes.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Aniruddh Shekhawat, H. Alex Hsain, Younghwan Lee, Jacob L. Jones, Saeed Moghaddam
Summary: This study investigates the effects of ferroelectric and interface film thickness on the tunneling electroresistance or ON/OFF current ratio of Hf0.5Zr0.5O2/Al2O3 based FTJ devices. By optimizing the thickness of the ferroelectric and interface films, it is possible to enhance the ON/OFF current ratio, while analyzing the relationship between interface properties improves the performance of the FTJ.
Article
Chemistry, Multidisciplinary
Jian Song, Mingyu Gong, Meng-fu Tsai, Youcao Ma, Houyu Ma, Yue Liu, Ying-hao Chu, Rong Huang, Jun Ouyang, Jian Wang, Tongxiang Fan
Summary: By using atomistic simulation and microscopy characterization, a pseudo-ferroelectric domain with similar morphology to a ferroelectric domain but with the same defect character as a ferroelastic domain-wall, i.e., a semi-coherent (100)(matrix)||(100)(domain) interface, is identified. Pseudo-ferroelectric domain walls play a critical role in the migration kinetics of ferroelastic domains and the piezoelectric responses of ferroelectric thin films during cyclic mechanical/electrical loading.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Materials Science, Ceramics
Branimir Bajac, Jelena Vukmirovic, Natasa Samardzic, Juras Banys, Goran Stojanovic, Jelena Bobic, Vladimir V. Srdic
Summary: In this study, lead-free multilayer structures composed of perovskite BaTiO3 and spinel NiFe2O4 thin layers were obtained using a solution deposition method. The results showed well-defined layered structure, nanometer-scale grains, and crystalline nature of the thin films. The dielectric properties of the multilayer BaTiO3/NiFe2O4 thin films were influenced by temperature and frequency, and the introduction of the ferrite layer reduced dielectric response and increased low frequency permittivity dispersion.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Multidisciplinary
Haidong Lu, Yueze Tan, Leonie Richarz, Jiali He, Bo Wang, Dennis Meier, Long-Qing Chen, Alexei Gruverman
Summary: Piezoresponse force microscopy (PFM) is used to investigate the electromechanical behavior of the head-to-head (H-H) and tail-to-tail (T-T) domain walls on the non-polar surfaces of three uniaxial ferroelectric materials. It is found that the crystal at the H-H and T-T domain walls exhibit an out-of-plane deformation even in the absence of the out-of-plane polarization component due to a specific form of the piezoelectric tensor. The dominant contribution comes from the counteracting shear strains on both sides of the domain walls, regardless of the materials' symmetry.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Weiwei Yang, Felipe Polo-Garzon, Hua Zhou, Zhennan Huang, Miaofang Chi, Harry Meyer III, Xinbin Yu, Yuanyuan Li, Zili Wu
Summary: In this study, different Pd single atom catalysts on ceria support were obtained by thermal pretreatment, leading to enhanced activity for methane oxidation. The enhanced activity is related to the oxygen-deficient local structure and elongated interacting distance with ceria.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Chemistry, Physical
Xiaohan Wu, Da Lan, Chengjun Sun, Hua Zhou, Xiaojiang Yu, Ping Yang, Xiaoqian Yu, Chao Liu, Pingfan Chen, Jun Ding, Jingsheng Chen, Gan Moog Chow
Summary: This study reports a two-step magnetization reversal in PZT/LSMO superlattices, which is attributed to the combined effects of strain, ferroelectric polarization, and exchange. The results demonstrate enhanced magnetoelectric coupling in PZT/LSMO superlattices, which holds significant implications for the application of multiferroic-based devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Multidisciplinary
Saman Bagheri, Jehad Abourahma, Haidong Lu, Nataliia S. Vorobeva, Shengyuan Luo, Alexei Gruverman, Alexander Sinitskii
Summary: This paper demonstrates a high-yield fabrication of electromechanical devices based on individual suspended monolayer MXene flakes. The devices show stable electromechanical responses and high electrical conductivity.
Article
Multidisciplinary Sciences
Zhongran Liu, Han Wang, Ming Li, Lingling Tao, Tula R. Paudel, Hongyang Yu, Yuxuan Wang, Siyuan Hong, Meng Zhang, Zhaohui Ren, Yanwu Xie, Evgeny Y. Tsymbal, Jingsheng Chen, Ze Zhang, He Tian
Summary: Domain-wall nanoelectronics is a new paradigm for non-volatile memory and logic technologies, where domain walls serve as an active element. Charged domain walls in ferroelectric structures have unique electronic and transport properties, which are useful for various nanoelectronics applications. In this study, a strategy for controllable creation and manipulation of charged domain walls in BiFeO3 ferroelectric films is reported, and their functionality as a memristor a few unit cells thick is demonstrated.
Article
Chemistry, Physical
Mingyu Hu, Yalan Zhang, Jue Gong, Hua Zhou, Xianzhen Huang, Mingzhen Liu, Yuanyuan Zhou, Shihe Yang
Summary: By employing a sequential surface treatment method, we have significantly improved the optoelectronic properties and stability of cesium tin-lead perovskites. This has resulted in a power conversion efficiency of 16.79% and a T90 stability of 958 h, surpassing previous reported performance parameters for inorganic Sn-Pb PSCs and reducing the performance gap between all-inorganic and hybrid organic-inorganic Sn-Pb PSCs with sub-1.4 eV bandgaps.
ACS ENERGY LETTERS
(2023)
Article
Chemistry, Physical
Zifang Liu, Pengfei Hou, Lizhong Sun, Evgeny Y. Tsymbal, Jie Jiang, Qiong Yang
Summary: In this work, a two-dimensional van der Waals heterostructure composed of an alpha-In2Se3 ferroelectric and a hexagonal IV-VI semiconductor is designed, and an in-plane ferroelectric tunnel junction based on these heterostructures is proposed. First-principles calculations show that the electronic band structure of the designed heterostructures can be switched between insulating and metallic states by ferroelectric polarization. It is demonstrated that the in-plane ferroelectric tunnel junction exhibits two distinct transport regimes, tunneling and metallic, for OFF and ON states, respectively, resulting in a giant tunneling electroresistance effect with the OFF/ON resistance ratio exceeding 1 x 10(4). The results provide a promising approach for high-density ferroelectric memory based on 2D ferroelectric/semiconductor heterostructures.
NPJ COMPUTATIONAL MATERIALS
(2023)
Article
Physics, Applied
C. J. McCluskey, A. Kumar, A. Gruverman, I. Luk'yanchuk, J. M. Gregg
Summary: Ferroelectric domain walls usually have enhanced electrical conductivity, but in lead germanate, head-to-head and tail-to-tail walls are electrically insulating. Recent studies suggest that this is because polar divergence is obviated by domain bifurcation and suspected local dipolar rotation. A study using tomographic piezoresponse force microscopy on triglycine sulfate confirms that mutual domain bifurcation and suspected local dipolar rotation are not unique to lead germanate and may be widely present in other uniaxial ferroelectrics.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Minghao Xie, Sishuang Tang, Zhao Li, Maoyu Wang, Zhaoyu Jin, Panpan Li, Xun Zhan, Hua Zhou, Guihua Yu
Summary: Harvesting recyclable ammonia (NH3) from the electrocatalytic reduction of nitrate (NO3RR) is a sustainable strategy to close the nitrogen cycle in an energy-efficient and environmentally friendly manner. In this study, a new intermetallic single-atom alloy (ISAA) In-Pd bimetallene is reported to boost neutral NO3RR with high efficiency and stability. By integrating the NO3RR catalyst into a Zn-NO3(-) flow battery, high power density and NH3 production efficiency are achieved.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2023)
Article
Chemistry, Physical
D. C. Mahendra, Ding-Fu Shao, Vincent D. -H. Hou, Arturas Vailionis, P. Quarterman, Ali Habiboglu, M. B. Venuti, Fen Xue, Yen-Lin Huang, Chien-Min Lee, Masashi Miura, Brian Kirby, Chong Bi, Xiang Li, Yong Deng, Shy-Jay Lin, Wilman Tsai, Serena Eley, Wei-Gang Wang, Julie A. Borchers, Evgeny Y. Tsymbal, Shan X. Wang
Summary: By utilizing unconventional spins generated in a MnPd3 thin film grown on an oxidized silicon substrate, the authors observed both conventional spin-orbit torques and unconventional out-of-plane and in-plane anti-damping-like torques in MnPd3/CoFeB heterostructures, enabling complete field-free switching of perpendicular cobalt. These unconventional torques are attributed to the low symmetry of the (114)-oriented MnPd3 films. The results provide a path towards practical spin channels in ultrafast magnetic memory and logic devices.
Article
Nanoscience & Nanotechnology
Sreejith Nair, Zhifei Yang, Dooyong Lee, Silu Guo, Jerzy T. Sadowski, Spencer Johnson, Abdul Saboor, Yan Li, Hua Zhou, Ryan B. Comes, Wencan Jin, K. Andre Mkhoyan, Anderson Janotti, Bharat Jalan
Summary: A study shows that epitaxial strain can be used to enhance the metal oxidation chemistry and thin-film growth of metal oxide thin films. Platinum group metal oxides are promising materials for future electronics and spintronics. However, their synthesis as thin films is challenging due to low vapor pressures and oxidation potentials. Using Ir as an example, the researchers demonstrate how epitaxial strain can control its oxidation chemistry, enabling phase-pure Ir or IrO2 films. The study also reveals the generality of this principle by showing the effect of epitaxial strain on Ru oxidation.
NATURE NANOTECHNOLOGY
(2023)
Article
Physics, Multidisciplinary
Haoying Sun, Jiahui Gu, Yongqiang Li, Tula R. Paudel, Di Liu, Jierong Wang, Yipeng Zang, Chengyi Gu, Jiangfeng Yang, Wenjie Sun, Zhengbin Gu, Evgeny Y. Tsymbal, Junming Liu, Houbing Huang, Di Wu, Yuefeng Nie
Summary: By applying uniaxial strain, we achieved pure in-plane polarized ferroelectricity in ultrathin SrTiO3 membranes, which allows for the investigation of ferroelectric size effects without the interference of the depolarization field. Our study reveals that the stability of ferroelectricity is influenced by the thickness-dependent dipole-dipole interactions within the transverse Ising model.
PHYSICAL REVIEW LETTERS
(2023)
Article
Multidisciplinary Sciences
Shu Shi, Haolong Xi, Tengfei Cao, Weinan Lin, Zhongran Liu, Jiangzhen Niu, Da Lan, Chenghang Zhou, Jing Cao, Hanxin Su, Tieyang Zhao, Ping Yang, Yao Zhu, Xiaobing Yan, Evgeny Y. Tsymbal, He Tian, Jingsheng Chen
Summary: The authors demonstrate the stabilization of the metastable orthorhombic phase in Hf0.5 Zr0.5O2 films through interface engineering and hole doping.
NATURE COMMUNICATIONS
(2023)
Article
Chemistry, Physical
Xinbo Li, Xiyang Wang, Junfang Ding, Mingwei Ma, Shuhua Yuan, Qilei Yang, Zhen Wang, Yue Peng, Chengjun Sun, Hua Zhou, Haozhe Liu, Yimin A. Wu, Keke Huang, Liping Li, Guangshe Li, Shouhua Feng
Summary: This study focuses on unraveling the important role of surface oxygen sites in catalytic reactions of transition metal oxides. By modifying the surface structure of cubic perovskite cobalt oxide, the research demonstrates how active oxygen sites enhance the kinetics of the CO oxidation reaction through a Mars-van Krevelen mechanism. This understanding provides valuable insight into the relationship between active oxygen sites, surface electronic structure, and the reaction mechanism of transition metal oxides.
Article
Physics, Applied
Ranjan Kumar Patel, Ramesh Naidu Jenjeti, Rajat Kumar, Nandana Bhattacharya, Siddharth Kumar, Shashank Kumar Ojha, Zhan Zhang, Hua Zhou, Ke Qu, Zhen Wang, Zhenzhong Yang, Christoph Klewe, Padraic Shafer, S. Sampath, Srimanta Middey
Summary: This study investigates the OER activity of (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)NiO3 single-crystalline thin films grown on NdGaO3 substrates as a function of film thickness in 0.1 M KOH electrolyte. The OER activity increases with the thickness of the film due to enhanced Ni d-O p covalency and reduced charge transfer energy. However, excessive leaching occurs in thicker films, and a film thickness of 75 unit cells is found to have optimal OER activity.
APPLIED PHYSICS REVIEWS
(2023)
