4.8 Article

Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field

Journal

NANO LETTERS
Volume 16, Issue 10, Pages 6656-6660

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b03439

Keywords

Dirac cone engineering; topological surface state; spin reorientation; quantum anomalous Hall phase

Funding

  1. SHINES, an Energy Frontier Research Center - U.S. Department of Energy, Office of Science, Basic Energy Sciences [SC0012670]
  2. National Research Foundation of Korea through SRC program [2011-0030046]

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The tailoring, of topological surface states in topological insulators is essential for device applications and for exploring new topological phase. Here, we propose a practical way to induce the quantum anomalous Hall phase and unusual metal-insulator transitions in Cr-doped Bi2Se3 films based on the model Hamiltonian and first-principles calculations. Using the combination of in-plane and plane-normal components of the spin, along with external electric fields, we demonstrate that the topological state and band structures of topological insulating films exhibit rich features such as the shift of Dirge cones and the opening of nontrivial band gaps. We also show that: the in-plane magnetization leads to significant suppression,of inter-TSS scattering in Cr-doped Bi2Se3. Our work provides new strategies to obtain the desired electronic structures for the device, complementary to the-efforts of an extensive material search.

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