Journal
NANO LETTERS
Volume 16, Issue 12, Pages 7317-7324Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b02004
Keywords
In-plane Si nanowires; silicon on sapphire; heteroepitaxy; self-alignment
Categories
Funding
- National Basic Research 973 Program [2014CB921101, 2013CB632101]
- NSFC [61674075, 11274155, 61204050]
- Jiangsu Excellent Young Scholar Program
- Scientific and Technological Support Program in Jiangsu province [BE2014147-2]
- Jiangsu Shuangchuang Team's Personal Program
- Fundamental Research Funds for the Central Universities
- Anhui Province Natural Science Research Program in universities [KJ2016A507]
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The heteroepitaxial growth of crystal silicon thin films on sapphire, usually referred to as SoS, has been a key technology for high-speed mixed-signal integrated circuits and processors. Here, we report a novel nanoscale SoS heteroepitaxial growth that resembles the in-plane writing of self-aligned silicon nanowires (SiNWs) on R-plane sapphire. During a low temperature growth at <350 degrees C, compared to that required for conventional SoS fabrication at >900 degrees C, the bottom heterointerface cultivates crystalline Si pyramid seeds within the catalyst droplet, while the vertical SiNW/catalyst interface subsequently threads the seeds into continuous nanowires, producing self-oriented in-plane SiNWs that follow a set of crystallographic directions of the sapphire substrate. Despite the low-temperature fabrication process, the field effect transistors built on the SoS-SiNWs demonstrate a high on/off ratio of >5 x 10(4) and a peak hole mobility of >50 cm(2)/V-s. These results indicate the novel potential of deploying in-plane SoS nanowire channels in places that require high-performance nanoelectronics and optoelectronics with a drastically reduced thermal budget and a simplified manufacturing procedure.
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