Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Reconfigurable Two-Dimensional Air-Gap Barristors

(2023) Guangqi Zhang et al.   ACS Nano

Vertical Nonvolatile Schottky‐Barrier‐Field‐Effect Transistor with Self‐Gating Semimetal Contact

(2023) Yaoqiang Zhou et al.   ADVANCED FUNCTIONAL MATERIALS

Two-dimensional reconfigurable electronics enabled by asymmetric floating gate

(2022) Tengyu Jin et al.   Nano Research

High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts

(2022) Kwan-Ho Kim et al.   ACS Nano

Phase-controlled epitaxial growth of MoTe2: Approaching high-quality 2D materials for electronic devices with low contact resistance

(2022) Li Tao et al.   JOURNAL OF APPLIED PHYSICS

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2–BN–Graphene van der Waals Heterostructures

(2022) Hao Wu et al.   NANO LETTERS

Vertical MoS2 transistors with sub-1-nm gate lengths

(2022) Fan Wu et al.   NATURE

High-κ perovskite membranes as insulators for two-dimensional transistors

(2022) Jing-Kai Huang et al.   NATURE

Dirac-source diode with sub-unity ideality factor

(2022) Gyuho Myeong et al.   Nature Communications

Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device

(2022) Xingxia Sun et al.   Nature Electronics

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

(2021) Xiankun Zhang et al.   Nature Communications

Ultralow contact resistance between semimetal and monolayer semiconductors

(2021) Pin-Chun Shen et al.   NATURE

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

(2021) Xiaolong Xu et al.   SCIENCE

One-Step Synthesis of NbSe2/Nb-Doped-WSe2 Metal/Doped-Semiconductor van der Waals Heterostructures for Doping Controlled Ohmic Contact

(2021) Van Tu Vu et al.   ACS Nano

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

(2021) Xiaochi Liu et al.   ADVANCED MATERIALS

Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors

(2020) Yang Liu et al.   Nano Research

Doping-free complementary WSe2 circuit via van der Waals metal integration

(2020) Lingan Kong et al.   Nature Communications

Two-dimensional materials for next-generation computing technologies

(2020) Chunsen Liu et al.   Nature Nanotechnology

Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

(2020) Chen Pan et al.   Nature Electronics

Programmable devices based on reversible solid-state doping of two-dimensional semiconductors with superionic silver iodide

(2020) Sung-Joon Lee et al.   Nature Electronics

Gate‐Controlled Polarity‐Reversible Photodiodes with Ambipolar 2D Semiconductors

(2020) Junli Du et al.   ADVANCED FUNCTIONAL MATERIALS

Suppression of leakage current in carbon nanotube field-effect transistors

(2020) Lin Xu et al.   Nano Research

Ambipolar 2D Semiconductors and Emerging Device Applications

(2020) Wennan Hu et al.   Small Methods

Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs

(2019) Chang-Soo Lee et al.   NANO LETTERS

Self-Healing Originated van der Waals Homojunctions with Strong Interlayer Coupling for High-Performance Photodiodes

(2019) Xiankun Zhang et al.   ACS Nano

Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization

(2019) Liang Lv et al.   Nature Communications

Scaling-up Atomically Thin Coplanar Semiconductor–Metal Circuitry via Phase Engineered Chemical Assembly

(2019) Xiaolong Xu et al.   NANO LETTERS

A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

(2019) Juan Lyu et al.   ADVANCED MATERIALS

Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage

(2019) Lijun Liu et al.   Nano Research

Contact engineering for 2D materials and devices

(2018) Daniel S. Schulman et al.   CHEMICAL SOCIETY REVIEWS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

(2018) Chenguang Qiu et al.   SCIENCE

WSe 2 /GeSe heterojunction photodiode with giant gate tunability

(2018) Zhenyu Yang et al.   Nano Energy

Uncovering the Conduction Behavior of van der Waals Ambipolar Semiconductors

(2018) Feng Wang et al.   ADVANCED MATERIALS

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

(2017) Xiao-Xi Li et al.   Nature Communications

High-Electron-Mobility and Air-Stable 2D Layered PtSe2FETs

(2016) Yuda Zhao et al.   ADVANCED MATERIALS

Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2Dichalcogenide Heterojunction

(2016) Atiye Pezeshki et al.   ADVANCED MATERIALS

Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio

(2015) Chenguang Qiu et al.   ACS Nano

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Bandgap opening in few-layered monoclinic MoTe 2

(2015) Dong Hoon Keum et al.   Nature Physics

Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

(2015) Hua-Min Li et al.   Nature Communications

Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

(2014) Yexin Deng et al.   ACS Nano

The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2

(2014) Michele Buscema et al.   Nano Research

Solar-energy conversion and light emission in an atomic monolayer p–n diode

(2014) Andreas Pospischil et al.   Nature Nanotechnology

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

(2013) Weijie Zhao et al.   Nanoscale