Effects of metal work function and gate-Oxide dielectric on super high frequency Performance of a non-align junction DG-MOSFET based inverter in the sub -100 nm regime: a TCAD simulation Analysis

Title
Effects of metal work function and gate-Oxide dielectric on super high frequency Performance of a non-align junction DG-MOSFET based inverter in the sub -100 nm regime: a TCAD simulation Analysis
Authors
Keywords
-
Journal
INTERNATIONAL JOURNAL OF ELECTRONICS
Volume -, Issue -, Pages -
Publisher
Informa UK Limited
Online
2023-11-06
DOI
10.1080/00207217.2023.2278435

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