4.1 Article

An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 μm CMOS Technology

Journal

IET CIRCUITS DEVICES & SYSTEMS
Volume 2023, Issue -, Pages -

Publisher

WILEY-HINDAWI
DOI: 10.1049/2023/5586912

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A new approach to increase the power-added efficiency (PAE) of a class E power amplifier (PA) is proposed. The performance of the PA is tested by generating different waveforms at the driver stage and achieving different PAE values. Simulation results show that the proposed method can achieve high output power at 5 GHz frequency.
A new approach to increasing the power-added efficiency (PAE) of a class E power amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a reactance compensation technique is utilized to maximize the bandwidth at the operating frequency. The driver stage creates either a half-wave rectified sine wave or a half-wave rectified sawtooth wave. By applying each one of the waves, the performance of the PA is examined and PAE = 70% and PAE = 50% is achieved. Plus, the output power of the PA is about 26 dBm when the DC voltage supply is 1.8 V. Advanced design system and TSMC 0.18 mu m CMOS process are utilized to carry on the simulation.

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