Low Energy and Write-Efficient Spin-Orbit Torque-Based Triple-Level Cell MRAM

SOT and STT-Based 4-Bit MRAM Cell for High-Density Memory Applications

(2021) Arshid Nisar et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Write-Efficient STT/SOT Hybrid Triple-Level Cell for High-Density MRAM

(2020) Yansong Xu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Energy-Efficient Differential Spin Hall MRAM-Based 4-2 Magnetic Compressor

(2019) Vikas Nehra et al.   IEEE TRANSACTIONS ON MAGNETICS

Parallel Multilevel Cell STT-MRAMs for Optimized Area Energy and Read–Write Operations

(2018) Sanjay Prajapati et al.   IEEE TRANSACTIONS ON MAGNETICS

Area and Energy Efficient Series Multilevel Cell STT-MRAMs for Optimized Read–Write Operations

(2018) Sanjay Prajapati et al.   IEEE TRANSACTIONS ON MAGNETICS

A Study on Practically Unlimited Endurance of STT-MRAM

(2017) Jimmy J. Kan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Novel Operation of a Multi-Bit SOT Memory Cell Addressed With a Single Write Line

(2017) Seung-heon Chris Baek et al.   IEEE TRANSACTIONS ON MAGNETICS

Compact Model for Spin–Orbit Magnetic Tunnel Junctions

(2016) Mohammad Kazemi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Spin-Transfer Torque Memories: Devices, Circuits, and Systems

(2016) Xuanyao Fong et al.   PROCEEDINGS OF THE IEEE

Multilevel Spin-Orbit Torque MRAMs

(2015) Yusung Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Multilevel Cell for STT-MRAM Realized by Capping Layer Adjustment

(2015) Mengxing Wang et al.   IEEE TRANSACTIONS ON MAGNETICS

Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

(2015) B. Fang et al.   AIP Advances

Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions

(2014) Juan G. Alzate et al.   APPLIED PHYSICS LETTERS

Enhancement of perpendicular magnetic anisotropy and transmission of spin-Hall-effect-induced spin currents by a Hf spacer layer in W/Hf/CoFeB/MgO layer structures

(2014) Chi-Feng Pai et al.   APPLIED PHYSICS LETTERS

The design and verification of MuMax3

(2014) Arne Vansteenkiste et al.   AIP Advances

DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories

(2013) Yusung Kim et al.   IEEE ELECTRON DEVICE LETTERS

Basic principles of STT-MRAM cell operation in memory arrays

(2013) A V Khvalkovskiy et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO

(2012) Junyeon Kim et al.   NATURE MATERIALS

Spin Hall effect devices

(2012) Tomas Jungwirth et al.   NATURE MATERIALS

Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect

(2012) Luqiao Liu et al.   PHYSICAL REVIEW LETTERS

Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

(2012) L. Liu et al.   SCIENCE

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

(2010) S. Ikeda et al.   NATURE MATERIALS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Demonstration of multilevel cell spin transfer switching in MgO magnetic tunnel junctions

(2008) Xiaohua Lou et al.   APPLIED PHYSICS LETTERS