Heterostrain‐Driven Bandgap Increase in Twisted WS2: A Nanoscale Study

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Spatially Resolved Band Gap and Dielectric Function in Two-Dimensional Materials from Electron Energy Loss Spectroscopy

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Morphology Deformation and Giant Electronic Band Modulation in Long-Wavelength WS2 Moiré Superlattices

(2022) Kaihui Li et al.   NANO LETTERS

Breaking Rotational Symmetry in Supertwisted WS2 Spirals via Moiré Magnification of Intrinsic Heterostrain

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Charting the low-loss region in electron energy loss spectroscopy with machine learning

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Straintronics with van der Waals materials

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Observation of interband collective excitations in twisted bilayer graphene

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Strongly correlated electrons and hybrid excitons in a moiré heterostructure

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The exit-wave power-cepstrum transform for scanning nanobeam electron diffraction: robust strain mapping at subnanometer resolution and subpicometer precision

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Topological Insulators in Twisted Transition Metal Dichalcogenide Homobilayers

(2019) Fengcheng Wu et al.   PHYSICAL REVIEW LETTERS

Evidence for moiré excitons in van der Waals heterostructures

(2019) Kha Tran et al.   NATURE

Charge-order and broken rotational symmetry in magic angle twisted bilayer graphene

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Stacking, strain, and twist in 2D materials quantified by 3D electron diffraction

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Probing Angle-Dependent Interlayer Coupling in Twisted Bilayer WS2

(2019) Wei Yan et al.   Journal of Physical Chemistry C

Unconventional superconductivity in magic-angle graphene superlattices

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Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions

(2018) Chendong Zhang et al.   Nature Nanotechnology

Electronic Spectrum of Twisted Graphene Layers under Heterostrain

(2018) Loïc Huder et al.   PHYSICAL REVIEW LETTERS

Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering

(2018) Yang Li et al.   2D Materials

Strain-Dependent Edge Structures in MoS2 Layers

(2017) Miguel Tinoco et al.   NANO LETTERS

Infrared fingerprints of few-layer black phosphorus

(2017) Guowei Zhang et al.   Nature Communications

Theory and practice of electron diffraction from single atoms and extended objects using an EMPAD

(2017) Michael C Cao et al.   Microscopy

Strong Modulation of Optical Properties in Black Phosphorus through Strain-Engineered Rippling

(2016) Jorge Quereda et al.   NANO LETTERS

Direct observation of the layer-dependent electronic structure in phosphorene

(2016) Likai Li et al.   Nature Nanotechnology

Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction

(2016) Lei Ye et al.   ACS Photonics

Elastic Deformations in 2D van der waals Heterostructures and their Impact on Optoelectronic Properties: Predictions from a Multiscale Computational Approach

(2015) Hemant Kumar et al.   Scientific Reports

Coupling and Interlayer Exciton in Twist-Stacked WS2Bilayers

(2015) Shoujun Zheng et al.   Advanced Optical Materials

High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response

(2014) Srinivasa Reddy Tamalampudi et al.   NANO LETTERS

Commensurate–incommensurate transition in graphene on hexagonal boron nitride

(2014) C. R. Woods et al.   Nature Physics

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

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Evolution of interlayer coupling in twisted molybdenum disulfide bilayers

(2014) Kaihui Liu et al.   Nature Communications

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Local Strain Engineering in Atomically Thin MoS2

(2013) Andres Castellanos-Gomez et al.   NANO LETTERS

Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices

(2013) C. R. Dean et al.   NATURE

Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

(2013) Kallol Roy et al.   Nature Nanotechnology

Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition

(2013) Shujie Tang et al.   Scientific Reports

Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

(2012) Priya Johari et al.   ACS Nano

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Single-layer MoS2 transistors

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Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B