Effect of growth temperature on diode parameters of n-ZnO/p-Si heterojuction diodes grown by atomic layer deposition

Published 2016 View Full Article

Authors

Keywords

Atomic layer deposition, ZnO thin film, Heterojuction, Diode parameters

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Volume 54, Issue -, Pages 1-5

Publisher

Elsevier BV

Online

2016-06-28

DOI

10.1016/j.mssp.2016.06.006

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started