Journal
MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS
Volume 19, Issue 2, Pages 413-419Publisher
UNIV FED SAO CARLOS, DEPT ENGENHARIA MATERIALS
DOI: 10.1590/1980-5373-MR-2015-0411
Keywords
TiO2 thin films; XRD; SEM analysis; Photoluminescence (PL); FTIR; Dielectric; constant and Dielectric loss
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Titanium dioxide (TiO2) thin films were prepared by Chemical Bath Deposition (CBD) method. The X-ray diffraction (XRD) analysis was used to examine the structure and to determine the crystallite size of TiO2 thin film. The surface morphology of the film was studied using Scanning Electron Microscopy (SEM). The optical properties were studied using the UV-Visible and photoluminescence (PL) spectrum. Optical constants such as band gap, refractive index, extinction coefficient and electric susceptibility were determined. The FT-IR spectrum revealed the strong presence of TiO2. The dielectric properties of TiO2 thin films were studied for different frequencies and different temperatures. The AC electrical conductivity test revealed that the conduction depended both on the frequency and the temperature. Photoconductivity study was carried out in order to ascertain the positive photoconductivity of the TiO2 thin films.
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