Journal
MATERIALS RESEARCH BULLETIN
Volume 78, Issue -, Pages 16-19Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2016.02.012
Keywords
Oxides; Thin films; Semiconductors; Optical properties; Luminescence
Categories
Funding
- National Natural Science Foundation of China [51232009]
- Natural Science Foundation of Jiangsu Higher Education Institutions of China [15KJB510005]
- Talent Fund of Jiangsu University [15JDG042]
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In this article, the optical properties of ZnO:Be films grown by plasma-assisted molecular beam epitaxy were investigated by the excitation density-dependent and temperature-dependent photoluminescence measurements. The low temperature photoluminescence spectra showed a dominant excitons bound to neutral donors (D degrees X) emission centered at 3.3540 eV and strong donor-acceptor pair (DAP) transitions at 3.3000 eV. In addition, it showed that the intensity ratio of the DAP and D degrees X peaks changed with background electron concentration. Furthermore, a shallow acceptor state with ionization energy of 116 meV was found and attributed to Zn vacancy. The present study further suggests that Be and N codoping ZnO might be suitable for fabricating reliable p-type ZnO materials. (C) 2016 Elsevier Ltd. All rights reserved.
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