Journal
LEUKOS
Volume 12, Issue 4, Pages 203-212Publisher
TAYLOR & FRANCIS INC
DOI: 10.1080/15502724.2015.1134333
Keywords
CMOS integrated circuit technology; silicon photonics; Si light emitting devices
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Funding
- National Natural Science Foundation of China [61540013]
- Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201508]
- Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education, China
- South Africa National Research Foundation [FA200604110043]
- Calit2 Fellowship
- Key International Collaboration Grant in South Africa [KSC 69798]
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In this article, we discuss the emission of visible light (400-900 nm) by a monolithically integrated silicon p-n junction under reverse bias. Silicon light emitting devices (Si-LEDs) could be designed and realized utilizing the standard complementary metal oxide semiconductor (CMOS) technology. Increased electroluminescence from the three-terminal MOS-like structure is observed, with the approach of carrier energy and momentum engineering design. Because Si-LEDs, waveguides, and photodetectors (Si) can be integrated on a single chip, a small microphotonic system could be realized in the CMOS integrated circuitry standard platform. The results can be substantially utilized for realizing a complete on-chip optical link.
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