Journal
FRONTIERS OF PHYSICS
Volume 18, Issue 5, Pages -Publisher
HIGHER EDUCATION PRESS
DOI: 10.1007/s11467-023-1286-2
Keywords
two-dimensional (2D) semiconductor; transition metal dichalcogenides (TMDs); chemical vapor deposition (CVD); heterostructures; device applications
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Two-dimensional transition metal dichalcogenides (TMDs) have attracted great interest due to their fascinating electronic energy band structures, rich valley physical properties, and strong spin-orbit coupling. This review discusses the state-of-the-art strategies for preparing TMDs via chemical vapor deposition, including wafer-scale synthesis, phase transition, doping, alloy, and stacking engineering. The recent progress on the application of multi-functional devices based on 2D TMDs is highlighted, and challenges and prospects for practical device applications are proposed.
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating electronic energy band structures, rich valley physical properties and strong spin-orbit coupling have attracted tremendous interest, and show great potential in electronic, optoelectronic, spintronic and valleytronic fields. Stacking 2D TMDs have provided unprecedented opportunities for constructing artificial functional structures. Due to the low cost, high yield and industrial compatibility, chemical vapor deposition (CVD) is regarded as one of the most promising growth strategies to obtain high-quality and large-area 2D TMDs and heterostructures. Here, state-of-the-art strategies for preparing TMDs details of growth control and related heterostructures construction via CVD method are reviewed and discussed, including wafer-scale synthesis, phase transition, doping, alloy and stacking engineering. Meanwhile, recent progress on the application of multi-functional devices is highlighted based on 2D TMDs. Finally, challenges and prospects are proposed for the practical device applications of 2D TMDs.
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