Journal
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION
Volume 31, Issue 1, Pages 52-57Publisher
WUHAN UNIV TECHNOLOGY
DOI: 10.1007/s11595-016-1329-4
Keywords
germanium; nanowires; LPCVD; doping; VLS
Categories
Funding
- National Basic Research Program of China [2013CB934103, 2012CB933003]
- National Natural Science Fund for Distinguished Young Scholars [51425204]
- National Natural Science Foundation of China [51521001, 51502227]
- China Postdoctoral Science Foundation [2015T80845]
Ask authors/readers for more resources
The optimized growth conditions for high density germanium (Ge) nanowires and P-doped Ge nanowires on Si (111) substrate were investigated, the phosphorus (P)-doping in Ge nanowires was also characterized. Vapor liquid solid-low pressure chemical vapor deposition (VLS-LPCVD) of Ge nanowires was conducted with different thicknesses of Au film as catalyst, different flow rates of GeH4 as precursor and PH3/Ar as co-flow. The morphologies of the Ge nanowires were characterized by scanning electron microscopy (SEM), the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak (342-345 cm(-1)) and asymmetric broadening of Ge-Ge vibrational peak (about 300 cm(-1)), respectively. The characterization results show that 1 nm thickness of Au catalyst is the most suitable condition among thicknesses of 0.1, 1, 5, and 10 nm for the growth of high density Ge nanowires at 300 and 350 degrees C, and 0.5 sccm is the best flow rate of PH3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5, 1 and 2 sccm. The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 degrees C.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available