Imaging and control of periodic array of stripe domain and domain wall in epitaxial BiFeO3 thin films

Ferroelectric stripe domain structure and domain walls were investigated by vector PFM on epitaxial BiFeO3 thin films. Measurements of topography of film versus distance between spikes, we identify the 109 degrees domain in the film, were supported by XRD and AFM characterization. 109 degrees domain can be switched under the electric field engendered by the biased PFM tip, and their controllable 109 degrees rotation can be maintained by electron injection by the PFM tip. These stripe domain walls are conductive, provide an opportunity to further study their new properties in high-density memory devices.

Automated summary

Ferroelectric stripe domain structure and domain walls in epitaxial BiFeO3 thin films were investigated using vector PFM. Measurements of film topography versus distance between spikes, supported by XRD and AFM characterization, revealed the presence of a 109 degrees domain in the film. The 109 degrees domain can be switched under the electric field generated by a biased PFM tip, and its controllable rotation can be maintained by electron injection. These conductive stripe domain walls offer opportunities for studying new properties in high-density memory devices.