4.1 Article

Electronic and optical properties of ZnOS/ZnO quantum-well structures with polarization effects

Journal

JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 69, Issue 3, Pages 370-372

Publisher

KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.69.370

Keywords

Quantum well; Internal field; Optical gain

Funding

  1. National Research Foundation of Korea(NRF) - Korea government (MSIP) [2016R1A6A1A03012877, 2015-066177, NRF-2015R1D1A1A02062226, 2015K2A1-C2067880]
  2. National Research Foundation of Korea [2016R1A6A1A03012877] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The optical properties of ZnOS/ZnO quantum-well (QW) structures, considering piezoelectric and spontaneous polarizations, are investigated by using many-body effects. The ZnOS/ZnO QW structure is found to have small optical gain because SP polarizations have a negative sign in the well and increase with the inclusion of S. These results demonstrate that ZnOS/ZnO QW structure have a strong internal field. This structure offers further flexibility for band-gap engineering and potentially facilitates p-type doping of ZnO-based light-emitting diodes.

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