Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

The tunability of electronic and transport properties of InSe/MoSe2 van der Waals heterostructure: A first-principles study

(2023) Xiao He et al.   Surfaces and Interfaces

Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS2/Metal Schottky Barriers

(2022) Zhaofu Zhang et al.   ACS Applied Materials & Interfaces

Controllable carrier polarity in 2D HfS2(1−x)Te2x for short-wave infrared photodiodes

(2022) Jiafu Ye et al.   INFRARED PHYSICS & TECHNOLOGY

First-principles insights into the mechanical, optoelectronic, thermophysical, and lattice dynamical properties of binary topological semimetal BaGa2

(2022) M.I. Naher et al.   Results in Physics

First-principles prediction of strain-induced Dirac semimetal state and negative Poisson's ratio in TiZrB4 monolayer

(2022) Sittichain Pramchu et al.   Computational Condensed Matter

Metal contacts with Moire interfaces on WSe2 for ambipolar applications

(2022) Jiaqi Chen et al.   APPLIED PHYSICS LETTERS

The aggregation phenomenon of impurity atoms in Si and the properties of C-doped Si studied by first-principle calculations

(2022) Jianing Wang et al.   VACUUM

Ultralow contact resistance between semimetal and monolayer semiconductors

(2021) Pin-Chun Shen et al.   NATURE

Effect of the normal compressive strain and electric filed on the electronic and optical properties of Zr2CO2 MXene and MoSe2 van der Waals Heterojunction: A first principles calculation

(2021) Rui-Zhou Zhang et al.   VACUUM

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

(2021) Qianqian Wang et al.   npj 2D Materials and Applications

Electronic and mechanical properties of monocrystalline silicon doped with trace content of N or P: A first-principles study

(2021) W.J. Zhang et al.   SOLID STATE SCIENCES

Mechanism of charge redistribution at the metal–semiconductor and semiconductor–semiconductor interfaces of metal–bilayer MoS2 junctions

(2020) Qian Wang et al.   JOURNAL OF CHEMICAL PHYSICS

Elastic, electronic, bonding, and optical properties of WTe2 Weyl semimetal: A comparative investigation with MoTe2 from first principles

(2020) B. Rahman Rano et al.   Results in Physics

Miniaturized high-performance metallic 1T-Phase MoS2 micro-supercapacitors fabricated by temporally shaped femtosecond pulses

(2019) Chenyang Xu et al.   Nano Energy

In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study

(2018) Qingkai Qian et al.   LANGMUIR

Asymmetric electric field screening in van der Waals heterostructures

(2018) Lu Hua Li et al.   Nature Communications

Strain and electric field tunable electronic structure of buckled bismuthene

(2017) Ming-Yang Liu et al.   RSC Advances

Design of BAs-AlN monolayered honeycomb heterojunction structures: A first-principles study

(2016) Dulce C. Camacho-Mojica et al.   APPLIED SURFACE SCIENCE

Fermi level, work function and vacuum level

(2016) Antoine Kahn   Materials Horizons

Tuning the Schottky barrier height of the Pd–MoS2 contact by different strains

(2015) Biao Liu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Controlling the Schottky barrier atMoS2/metal contacts by inserting a BN monolayer

(2015) Mojtaba Farmanbar et al.   PHYSICAL REVIEW B

Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2

(2013) Hongliang Shi et al.   PHYSICAL REVIEW B

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Adhesion and electronic structure of graphene on hexagonal boron nitride substrates

(2011) B. Sachs et al.   PHYSICAL REVIEW B

Nickel Schottky junction on epi-Ge for strained Ge metal–oxide–semiconductor field-effect transistors source/drain engineering

(2011) M.H. Lee et al.   THIN SOLID FILMS

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS