4.8 Article

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Journal

ADVANCED MATERIALS
Volume 27, Issue 47, Pages 7809-7815

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201503592

Keywords

-

Funding

  1. Ministry of Science and Technology (MOST), Taiwan [103-2119-M-002-021-MY3, 102-2119-M-002-005, 103-2112-M-003-013-MY3, 103-2119-M-003-005-MY3]
  2. Taiwan Consortium of Emergent Crystalline Materials (TCECM)

Ask authors/readers for more resources

Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong lightmatter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Nanoscience & Nanotechnology

Internal Built-In Electric Fields at Organic-Inorganic Interfaces of Two-Dimensional Ruddlesden-Popper Perovskite Single Crystals

Cheng-Chieh Lin, Kai-Di Yang, Min-Chuan Shih, Shao-Ku Huang, Tzu-Pei Chen, Hung-Chang Hsu, Ching-An Chuang, Chih-Ying Huang, Lucas Wang, Chia-Chun Chen, Ching-Hwa Ho, Ya-Ping Chiu, Chun-Wei Chen

Summary: This study demonstrates the presence of internal built-in electric fields (BIEFs) in 2D organic-inorganic hybrid Ruddlesden-Popper perovskites (OIRPPs). The strength of these BIEFs reduces with increased quantum well width. The origin of these BIEFs is attributed to molecular dipoles pointing to the organic-inorganic interfaces. This discovery provides deep insight into understanding the optical properties of 2D OIRPPs for the future design of large-area and low-cost perovskite optoelectronic devices.

ACS APPLIED MATERIALS & INTERFACES (2022)

Article Nanoscience & Nanotechnology

Performance Enhancement of SnS/h-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method

Yih-Ren Chang, Tomonori Nishimura, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio

Summary: This research addresses the deterioration in performance of SnS p-type FETs caused by surface oxidation, and achieves a record-high field effect mobility through surface oxide conversion using highly reactive Ti.

ACS APPLIED MATERIALS & INTERFACES (2022)

Article Chemistry, Multidisciplinary

Directly Visualizing Photoinduced Renormalized Momentum-Forbidden Electronic Quantum States in an Atomically Thin Semiconductor

Hao-Yu Chen, Hung-Chang Hsu, Chuan-Chun Huang, Ming-Yang Li, Lain-Jong Li, Ya-Ping Chiu

Summary: This study utilizes light-modulated scanning tunneling microscopy and quasiparticle interference technique to reveal the unexplored momentum-forbidden electronic quantum states in transition metal dichalcogenide monolayers. The results highlight the large spin-splitting energy and the band renormalization dependent on photoexcited carrier density, emphasizing the importance of excited-state distribution in band renormalization.

ACS NANO (2022)

Article Chemistry, Multidisciplinary

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors

Chih-Yi Cheng, Wei-Liang Pai, Yi-Hsun Chen, Naomi Tabudlong Paylaga, Pin-Yun Wu, Chun-Wei Chen, Chi-Te Liang, Fang-Cheng Chou, Raman Sankar, Michael S. Fuhrer, Shao-Yu Chen, Wei-Hua Wang

Summary: This study investigates the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors through displacement current measurements. The research uncovers a strong self-gating effect and reveals the IL-phase-dependent transport characteristics. Raman spectroscopy confirms the dominance of self-gating caused by the correlation between the intra- and intersystem Coulomb interactions. This study is significant for understanding the capacitive coupling at the InSe/IL interface.

NANO LETTERS (2022)

Article Multidisciplinary Sciences

High-κ perovskite membranes as insulators for two-dimensional transistors

Jing-Kai Huang, Yi Wan, Junjie Shi, Ji Zhang, Zeheng Wang, Wenxuan Wang, Ni Yang, Yang Liu, Chun-Ho Lin, Xinwei Guan, Long Hu, Zi-Liang Yang, Bo-Chao Huang, Ya-Ping Chiu, Jack Yang, Vincent Tung, Danyang Wang, Kourosh Kalantar-Zadeh, Tom Wu, Xiaotao Zu, Liang Qiao, Lain-Jong Li, Sean Li

Summary: The scaling of silicon metal-oxide-semiconductor field-effect transistors has been successful, but with the thinning of silicon at smaller technology nodes, new challenges arise. In this study, researchers explore the use of ultrahigh-kappa single-crystalline perovskite strontium-titanium-oxide membranes as gate dielectrics for 2D field-effect transistors. These membranes have desirable properties and can mitigate the issues related to using ultrahigh-kappa dielectrics.

NATURE (2022)

Review Chemistry, Physical

Atomically resolved interlayer electronic states in complex oxides by using cross-sectional scanning tunneling microscopy

Bo-Chao Huang, Chun-Chih Hsu, Ying-Hao Chu, Ya-Ping Chiu

Summary: Complex oxides, oxide heterointerfaces, and layered cuprates show rich functionalities and diverse electronic structures, which can be tuned through precise growth techniques.

PROGRESS IN SURFACE SCIENCE (2022)

Article Chemistry, Multidisciplinary

Stabilized High-Membered and Phase-Pure 2D All Inorganic Ruddlesden-Popper Halide Perovskites Nanocrystals as Photocatalysts for the CO2 Reduction Reaction

Cheng-Chieh Lin, Jia-Ying Li, Nian-Zu She, Shao-Ku Huang, Chih-Ying Huang, I-Ta Wang, Fu-Li Tsai, Chuan-Yu Wei, Ting-Yi Lee, Di-Yan Wang, Cheng-Yen Wen, Shao-Sian Li, Atsushi Yabushita, Chih-Wei Luo, Chia-Chun Chen, Chun-Wei Chen

Summary: In this study, stable phase-pure high-membered 2D inorganic Ruddlesden-Popper perovskite (IRPP) nanosheets were successfully synthesized, exhibiting a strong quantum confinement effect with tunable absorption and emission. These materials show superior structural and optical stability, making them a promising candidate as photocatalysts in CO2 reduction reactions.

SMALL (2022)

Article Chemistry, Multidisciplinary

Accelerated Formation of 2D Ruddlesden-Popper Perovskite Thin Films by Lewis Bases for High Efficiency Solar Cell Applications

Swathi M. Gowdru, Jou-Chun Lin, Szu-Tan Wang, Yi-Chia Chen, Kuan-Chang Wu, Cheng-Nan Jiang, Yu-Dian Chen, Shao-Sian Li, Yuan Jay Chang, Di-Yan Wang

Summary: Lewis base urea was used as an effective additive to facilitate the formation of 2D RP perovskite thin films with larger grain size and high crystallinity.

NANOMATERIALS (2022)

Article Multidisciplinary Sciences

Low-defect-density WS2 by hydroxide vapor phase deposition

Yi Wan, En Li, Zhihao Yu, Jing-Kai Huang, Ming-Yang Li, Ang-Sheng Chou, Yi-Te Lee, Chien-Ju Lee, Hung-Chang Hsu, Qin Zhan, Areej Aljarb, Jui-Han Fu, Shao-Pin Chiu, Xinran Wang, Juhn-Jong Lin, Ya-Ping Chiu, Wen-Hao Chang, Han Wang, Yumeng Shi, Nian Lin, Yingchun Cheng, Vincent Tung, Lain-Jong Li

Summary: Two-dimensional semiconducting monolayers, such as transition metal dichalcogenides (TMDs), have great potential as channel materials in advanced electronics. Innovative growth reactions using hydroxide W species as a metal precursor show significantly lower defect density compared to conventional chemical vapor deposition (CVD) methods. Field-effect transistor (FET) devices based on this growth method exhibit high electron mobility and on-state current, comparable to exfoliated flakes, indicating the industrial potential of 2D materials.

NATURE COMMUNICATIONS (2022)

Article Chemistry, Multidisciplinary

Interface Influence on the Photoelectric Performance of Transition Metal Dichalcogenide Lateral Heterojunctions

Jingtao Li, Yang Ma, Yufo Li, Shao-Sian Li, Boxing An, Jingjie Li, Jiangong Cheng, Wei Gong, Yongzhe Zhang

Summary: The ultrathin feature of two-dimensional transition metal dichalcogenides (TMDs) brings special performance in electronic and optoelectronic fields. The synthesis of lateral heterojunctions with clean and sharp interfaces is still a challenge. In this study, a simple chemical vapor deposition (CVD) method is proposed to effectively separate the growth process of different TMDs, resulting in good regulation of the composition change at the junction region. The obtained MoS2-WS2 lateral heterojunctions exhibit better photoelectric performance than those with graded junctions.

ACS OMEGA (2022)

Article Chemistry, Analytical

A Co-Printed Nanoslit Surface Plasmon Resonance Structure in Microfluidic Device for LMP-1 Detection

Shu-Cheng Lo, Shao-Sian Li, Wen-Fai Yang, Kuang-Chong Wu, Pei-Kuen Wei, Horn-Jiunn Sheen, Yu-Jui Fan

Summary: This paper presents a new micro/nanostructure co-hot embossing technique for the integration of gold-capped nanostructures as localized surface plasmon resonance (SPR) sensors into a microfluidic channel. The advantage of this technique is that it eliminates the need for alignment between the SPR sensors and the microfluidic channel during bonding. The integrated SPR sensor and microfluidic channel were characterized, and the sensitivity of the SPR sensor to refractive index was determined using different concentrations of glycerol solutions. The SPR sensor was also used for quantifying latent membrane protein (LMP-1) by modifying anti-LMP-1 on its surface, and a calibration curve was created using different concentrations of LMP-1 samples.

BIOSENSORS-BASEL (2022)

Article Chemistry, Multidisciplinary

Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics

Jun-Ru Chang, Po-Hsun Ho, Chun-Hsiang Chen, Chun-Hao Chiang, Cheng-Hung Hou, Min-Chuan Shih, Hung-Chang Hsu, Wen-Hao Chang, Jing-Jong Shyue, Ya-Ping Chiu, Chun-Wei Chen

Summary: The researchers developed a reliable method for contact doping in 2D electronics, which effectively reduces contact resistance. Through a two-step doping process, strong and hysteresis-free doping was achieved, suitable for the commonly used transition-metal dichalcogenides. The method resulted in a record-high sheet conductance and carrier concentration in monolayer MoS2 devices.

ACS NANO (2023)

Article Materials Science, Multidisciplinary

Wavelength dependence of polarization-resolved second harmonic generation from ferroelectric SnS few layers

Redhwan Moqbel, Yih-Ren Chang, Zi-Yi Li, Sheng-Hsun Kung, Hao-Yu Cheng, Chi-Cheng Lee, Kosuke Nagashio, Kung-Hsuan Lin

Summary: In this work, the layered structure and ferroelectric properties of SnS were investigated experimentally and theoretically. Polarization-resolved second harmonic generation microscopy was used to study SnS few layers on mica substrates, and significant variations in SHG polar patterns were observed in the range of 800 nm to 1000 nm. Theoretical calculations were consistent with experimental results. This work is important for understanding the ferroelectric properties of SnS and the transition of different ferroic phases.

2D MATERIALS (2023)

Article Chemistry, Physical

Modulation and Direct Mapping of the Interfacial Band Alignment of an Eco-Friendly Zinc-Tin-Oxide Buffer Layer in SnS Solar Cells

Thi-Thong Ho, Zi-Liang Yang, Fang-Yu Fu, Efat Jokar, Hung-Chang Hsu, Pei-Chi Liu, Shaham Quadir, Cheng-Ying Chen, Ya-Ping Chiu, Chih- Wu, Kuei-Hsien Chen, Li-Chyong Chen

Summary: This study investigates the effect of eco-friendly Zn1-xSnxOy (ZTO) films, grown by atomic layer deposition, on the performance of thin-film solar cells. The results show that by controlling the Zn-to-Sn ratio in the ZTO films, the band alignment at the heterojunction can be optimized, leading to improved power conversion efficiency (PCE) and open-circuit voltage (Voc). The ZTO-based solar cells also show a reduction in charge recombination and higher photocurrent compared to CdS-based cells.

ACS APPLIED ENERGY MATERIALS (2022)

Article Materials Science, Multidisciplinary

Interplay of field-induced molecular dipole alignment and compensating surface polarization in low-temperature P-V hysteresis of MAPbBr3(001)

Lars Freter, Hung -Chang Hsu, Raman Sankar, Chun -Wei Chen, Rafal E. Dunin-Borkowski, Philipp Ebert, Ya-Ping Chiu, Michael Schnedler

Summary: We observed a hysteresis in tunneling spectra of cleaved MA-Br terminated (001) surfaces of MAPbBr(3) single crystals at 4.3 K. Simulations of the tunneling spectra revealed an underlying polarization-voltage hysteresis, which resulted from the rotation and alignment of MA molecules induced by subsurface fields and stabilized by dipole-dipole interactions, as well as the ion-lattice relaxation. The compensating surface polarization was detected by surface-sensitive tunneling spectroscopy.

PHYSICAL REVIEW MATERIALS (2023)

No Data Available