24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer

Published 2023 View Full Article

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Title
24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer
Authors
Keywords
-
Journal
IEEE Journal of the Electron Devices Society
Volume -, Issue -, Pages 1-1
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2023-01-10
DOI
10.1109/jeds.2023.3234235

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