4.6 Article

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

Journal

FRONTIERS OF PHYSICS
Volume 18, Issue 2, Pages -

Publisher

HIGHER EDUCATION PRESS
DOI: 10.1007/s11467-022-1228-4

Keywords

quantum anomalous Hall effect; valley polarization; topological valleytronics; transition metal dichalcogenides; jacutingaite family materials; first-principles calculations; van der Waals heterostructure

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We numerically study the valley polarization and anomalous Hall effect in van der Waals heterostructures based on Pt(2)AX(3) (A = Hg, Cd, Zn; X = S, Se, Te) materials. Four types of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase with significant valley splitting and band gaps. This study provides an ideal platform for applications in topological valleytronics.
We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt(2)AX(3) (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt(2)AX(3) and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt2HgS3/NiBr2, Pt2HgSe3/CoBr2, Pt2HgSe3/NiBr2, and Pt2ZnS3/CoBr2, with a maximum valley splitting of 134.2 meV in Pt2HgSe3/NiBr2 and sizable global band gap of 58.8 meV in Pt2HgS3/NiBr2. Our findings demonstrate an ideal platform to implement applications on topological valleytronics.

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