Plasmon-enhanced bulk charge separation via morphological and interfacial engineering in Au@carbon dots@CdS hybrid

The exploitation of morphological engineering strategies enables the design of semiconductor-based photo -catalysts with a precision that significantly enhances their photocatalytic activity. In this study, a paradigm has been provided that embeds plasmonic nanostructures within the bulk of the semiconductor, which demonstrates an improvement in interfacial charge transfer and separation. It involves a distinct core-double shelled Au@carbon dots@CdS hybrid, exhibiting excellent photocatalytic H2 generation under the visible light radiation. The interfacial engineering between the plasmonic nucleus and the semiconductor shell has been performed by the incorporation of carbon dots as faster charge channels. The effective driving force for plasmon-enhanced bulk charge separation of semiconductors and the unhindered interfacial charge transmission derived from carbon dots have been demonstrated by the use of steady state surface photovoltage (SPV) and transient state surface photovoltage (TPV) methods, as well as some intrinsic kinetics information of interfacial photoexcited charge carriers transfer processes.

Automated summary

In this study, a morphological engineering approach was used to design a semiconductor-based photo-catalyst embedded with plasmonic nanostructures, resulting in a significant enhancement of its photocatalytic activity. The incorporation of carbon dots as charge channels facilitated the plasmon-enhanced charge separation within the semiconductor, as demonstrated by steady state and transient state surface photovoltage methods.