4.6 Article

Interfacial traps and band offset enabled charge separation facilitating current/capacitance hysteresis in dual-oxide layered structure

Journal

APPLIED PHYSICS LETTERS
Volume 121, Issue 18, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0122317

Keywords

-

Funding

  1. National Science and Technology Council, Taiwan
  2. [MOST 109-2221-E-006-110-MY3]
  3. [MOST 109-2221-E-006-114-MY3]
  4. [MOST 110-2224-E-006-007]

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In this study, a WOx/ZrOx dual-oxide layered device was fabricated, which exhibited the coexistence of gradual resistive and capacitive switching. The expansion of this coexistence could be modulated by altering the oxygen content in the oxide materials. Additionally, the presence of negative differential resistance (NDR) was found to depend on the voltage sweep direction and range of applied bias.
Gradual switching in the memristor or memcapacitor devices is the key parameter for the next generation of bio-inspired neuromorphic computing. Here, we have fabricated the WOx/ZrOx dual-oxide layered device, which shows the coexistence of gradual resistive and capacitive switching arisen from the current and capacitance hysteresis curves, respectively. The expansion of hysteresis loop can be modulated by altering the oxygen content in the oxide materials. Interestingly, the presence of negative differential resistance (NDR) is dependent on the voltage sweep direction and range of applied bias, which can be reasoned by the local electric field, charge trapping/detrapping, and conduction band offset at the dual-oxide interface. This study provides the concept of the coexistence of current and capacitance hysteresis along with NDR, and it is highly potential for memristor and memcapacitor circuits to explore neuromorphic computing.

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