Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 16, Issue 5, Pages 5003-5007Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2016.12194
Keywords
CIGS; Solar Cell; Selenization
Categories
Funding
- Ministry of Science, ICT and Future Planning
- National Research Council of Science and Technology
- Ministry of Trade, Industry and Energy
- Korea Institute for Advancement of Technology
- Honam Institute of Regional Program Evaluation through Leading Industry Development for Economic Region
- Korea Institute of Industrial Technology through Regional Center of Excellence program
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We used a DC-sputtering method to deposit the precursor (Cu3Ga/In) onto Mo with 1 um thick/sodalime glass (SLG). We moved it onto a graphite crucible for the pre-annealing process, and the pressure of the process tube was about 10 torr without Ar gas flow. The crucible in quartz tube was heated by halogen lamp to 250 degrees C for 30 min, and then raised to 550 degrees C for 10 min under a selenium atmosphere. To complete the solar cells, a buffer layer of 50 nm CdS was then deposited by chemical bath deposition (CBD), followed by a double layer (high resistivity/low resistivity) of RF sputtered i-ZnO/Al-ZnO thin films. The Al front contacts were deposited by thermal evaporator.
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