Self-generated double transition-metal carbide MXene/Graphene oxide trilayered memristors for flexible electronics

Transition metal carbides (MXenes) proved to be promising two-dimensional (2D) material candidates that can overcome existing hurdles in flexible electronics. This study presents a comprehensive investigation of double transition metal (DTM) MXene Mo2TiC2Tx (as conducting top and bottom electrodes) and graphene oxide (GO as active layer) free-standing memristors fabricated under ambient conditions. Our free-standing trilayer devices retained both, primitive bipolar resistive switching and capacitive resistive switching characteristics in the same device that could be interconverted just by tuning the thickness of insulating GO layer. Furthermore, capacitive bipolar resistive switching phenomenon showed high durability (5000 cycles) and retention (10(5)). Additionally, the increase in active layer thickness favored increase in internal self-generated electric field (capacitance) as well as the current on/off ratio of the device. Our DTM-MXenes based free-standing memristors exceptionally improved device performance that pave a pathway towards fabricating flexible self-generating data storage devices.

Automated summary

This study investigates the double transition metal MXene and graphene oxide free-standing memristors, showing both bipolar resistive switching and capacitive resistive switching characteristics that can be interconverted by adjusting the thickness of the insulating layer. The capacitive bipolar resistive switching exhibits high durability and retention. Increasing the active layer thickness improves device performance.