Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm(2) chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 mu W, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.

Automated summary

This work presents the first integration of on-chip UV optoelectronics in 4H-SiC CMOS, including an image sensor with 64 active pixels and 1263 transistors. The image sensor offers serial digital, analog, and 2-bit ADC outputs, operates at 0.39 Hz, and has a maximum power consumption of 60 µW, making significant improvements over previous reports. UV optoelectronics find applications in various fields such as flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system opens up possibilities for new applications like harsh environment microcontrollers.