4.6 Article

(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity

Journal

ACS ENERGY LETTERS
Volume 7, Issue 11, Pages 4081-4088

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.2c01766

Keywords

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Funding

  1. U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under the Solar Energy Technology Office (SETO) [DE-EE0008747]
  2. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DOE-SC0013957]
  3. National Science Foundation [NNCI-1542101]
  4. Molecular Engineering & Sciences Institute
  5. Clean Energy Institute
  6. U.S. National Science Foundation through the UW Molecular Engineering Materials Center (MEM-C)
  7. State of Washington through the University of Washington Clean Energy Institute (CEI fellowship)
  8. Washington Research Foundation
  9. Alvin L. and Verla R. Kwiram endowment
  10. B. Seymour Rabinovitch Endowment
  11. Material Research Science and Engineering Center [DMR-1719797]

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We demonstrate that using APTMS as a surface passivator can reduce surface recombination velocity and enhance power conversion efficiency in mixed-cation mixed-halide perovskite solar cells. The study shows that APTMS can passivate defects at the perovskite surface and decouple the perovskite from detrimental interactions at the C-60 interface. The use of APTMS effectively suppresses nonradiative recombination and improves both the fill factor and open-circuit voltage, resulting in increased power-conversion efficiency.
We demonstrate reduced surface recombination velocity (SRV) and enhanced power-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solar cells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator. We show the APTMS serves to passivate defects at the perovskite surface, while also decoupling the perovskite from detrimental interactions at the C-60 interface. We measure a SRV of similar to 125 +/- 14 cm/s, and a concomitant increase of similar to 100 meV in quasi-Fermi level splitting in passivated devices compared to the controls. We use time-resolved photoluminescence and excitation-correlation photoluminescence spectroscopy to show that APTMS passivation effectively suppresses nonradiative recombination. We show that APTMS improves both the fill factor and open-circuit voltage (V-OC), increasing VOC from 1.03 V for control devices to 1.09 V for APTMS-passivated devices, and leads to a PCE increase from 15.90% to 18.03%. We attribute the enhanced performance to reduced defect density resulting in suppressed nonradiative recombination and lower SRV at the perovskite/transport layer interface.

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