Journal
ACS ENERGY LETTERS
Volume 7, Issue 11, Pages 4081-4088Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.2c01766
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Funding
- U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under the Solar Energy Technology Office (SETO) [DE-EE0008747]
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DOE-SC0013957]
- National Science Foundation [NNCI-1542101]
- Molecular Engineering & Sciences Institute
- Clean Energy Institute
- U.S. National Science Foundation through the UW Molecular Engineering Materials Center (MEM-C)
- State of Washington through the University of Washington Clean Energy Institute (CEI fellowship)
- Washington Research Foundation
- Alvin L. and Verla R. Kwiram endowment
- B. Seymour Rabinovitch Endowment
- Material Research Science and Engineering Center [DMR-1719797]
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We demonstrate that using APTMS as a surface passivator can reduce surface recombination velocity and enhance power conversion efficiency in mixed-cation mixed-halide perovskite solar cells. The study shows that APTMS can passivate defects at the perovskite surface and decouple the perovskite from detrimental interactions at the C-60 interface. The use of APTMS effectively suppresses nonradiative recombination and improves both the fill factor and open-circuit voltage, resulting in increased power-conversion efficiency.
We demonstrate reduced surface recombination velocity (SRV) and enhanced power-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solar cells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator. We show the APTMS serves to passivate defects at the perovskite surface, while also decoupling the perovskite from detrimental interactions at the C-60 interface. We measure a SRV of similar to 125 +/- 14 cm/s, and a concomitant increase of similar to 100 meV in quasi-Fermi level splitting in passivated devices compared to the controls. We use time-resolved photoluminescence and excitation-correlation photoluminescence spectroscopy to show that APTMS passivation effectively suppresses nonradiative recombination. We show that APTMS improves both the fill factor and open-circuit voltage (V-OC), increasing VOC from 1.03 V for control devices to 1.09 V for APTMS-passivated devices, and leads to a PCE increase from 15.90% to 18.03%. We attribute the enhanced performance to reduced defect density resulting in suppressed nonradiative recombination and lower SRV at the perovskite/transport layer interface.
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