Journal
JOURNAL OF MATERIALS SCIENCE
Volume 51, Issue 13, Pages 6166-6172Publisher
SPRINGER
DOI: 10.1007/s10853-016-9906-7
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Funding
- EPSRC Core Capability in Chemistry (CCC) [EP/K039547/1]
- Iraqi Culture Attache in London
- Parker family
- EPSRC [EP/K039547/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K039547/1] Funding Source: researchfish
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Tin(II)O-ethylxanthate [Sn(S2COEt)(2)] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111)-orientated, orthorhombic SnS films with controllable elemental stoichiometries (of between Sn1.3S and SnS) were reliably produced by selecting heating temperatures between 200 and 400 A degrees C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S2COEt)(2)] was characterized by thermogravimetric analysis and attenuated total reflection Fourier-transform infrared spectroscopy. The as-prepared SnS films were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, powder X-ray diffractometry, Raman spectroscopy, and UV-Vis spectroscopy.
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