Article
Engineering, Electrical & Electronic
Srinivasan Ashwyn Srinivasan, Joris Lambrecht, Davide Guermandi, Sebastien Lardenois, Mathias Berciano, Philippe Absil, Johan Bauwelinck, Xin Yin, Marianna Pantouvaki, Joris Van Campenhout
Summary: The study presents hybrid BiCMOS-Silicon photonics receivers with waveguide coupled Ge/Si avalanche photodiodes, demonstrating high optical modulation amplitude sensitivities at 50 Gb/s and 56 Gb/s. An in-depth analysis of receiver sensitivity is conducted to identify pathways for further improvements, paving the way for enhanced optical link margins.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2021)
Article
Computer Science, Hardware & Architecture
Rene Bonk, Ed Harstead, Robert Borkowski, Vincent Houtsma, Yannick Lefevre, Amitkumar Mahadevan, Dora van Veen, Michiel Verplaetse, Sheldon Walklin
Summary: This article assesses the current status of 25G and 50G time division multiplexed passive optical network (TDM PON) technologies by leveraging the cost efficiencies of Ethernet intra-datacenter ecosystem. The study predicts the impact of flexible modulation enhancement on 50G PON and concludes that a majority of future 50G PON optical network units can operate at 100 Gb/s PAM4. The options for a 100G PON capable of supporting full loss budget and reach requirements are also evaluated, with the conclusion that intensity-modulation and direct-detection (IM-DD) will be a strong contender for the next generation of PON after 50 Gb/s.
JOURNAL OF OPTICAL COMMUNICATIONS AND NETWORKING
(2023)
Article
Engineering, Electrical & Electronic
Giuseppe Caruso, Ivan N. Cano, Derek Nesset, Giuseppe Talli, Roberto Gaudino
Summary: The demand for higher capacity in broadband access networks, both wired and wireless, continues to drive research efforts. The recent publication of the recommendation for 50G-PON with conventional NRZ modulation is a significant development. Bidirectional point-to-point access networks, known as BiDi, are being standardized for mobile xHaul with a maximum capacity of 50 Gb/s using PAM-4 modulation. As research progresses towards the next generation 6G wireless, there is a need for single channel BiDi links with a minimum bitrate of 100 Gb/s. Experimental evaluation of four possible IMDD transceiver schemes suitable for optical access applications in the O-Band, achieving the desired bitrate using PAM-4, is presented in this paper.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Asta Katrine Storebo, Trond Brudevoll, Espen Selvig, Runar Wattum Hansen, Torgeir Lorentzen, Randi Haakenaasen
Summary: We investigated the nonlinear signal current response of a Hg0.72Cd0.28Te avalanche photodiode (APD) under high-intensity, finite-duration laser pulse irradiation. The study showed that carrier-induced perturbations and avalanche gain strongly influence the temporal behavior of the APD current at high irradiation levels and/or high gains. The addition of appropriate external series resistances in the external circuit is crucial in analyzing these high-intensity nonlinear gain effects. Oscillations in the signal current evolve in time and are related to junction transit time, remaining weakly dependent on irradiation levels and external resistance values until the resistance-capacitance (RC)-limited case.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Chao Zhang, Zixian Wei, Xueyang Li, Yibin Li, Lei Wang, Lai Wang, H. Y. Fu, Yanfu Yang
Summary: In this study, a high-speed UOWC system was designed using a 175μm blue mini-LED and an APD, achieving high data transmission rates and rate-distance product. Multiple comparison experiments were conducted to comprehensively investigate channel loss, transmission capacity, and computation complexity.
IEEE PHOTONICS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Hao Li, Chun-Ming Hsu, Jahnavi Sharma, James Jaussi, Ganesh Balamurugan
Summary: This article presents a 100-Gb/s PAM-4 ORX with integrated TIA and sampler in a single 28-nm CMOS IC, achieving optimized sensitivity and efficient performance through noise reduction and high bandwidth.
IEEE JOURNAL OF SOLID-STATE CIRCUITS
(2022)
Article
Engineering, Electrical & Electronic
Jose M. Castro, Rick Pimpinella, Bulent Kose, Paul Huang, Asher Novick, Brett Lane
Summary: This study introduces a theoretical model and experiments focusing on estimating and measuring MCDI over multimode optical channels using VCSEL transceivers, evaluating the impact on PAM-4 signals and bit error rate performance at data rates between 100 and 112 Gbps. The analysis highlights potential methods to improve the reach of multimode fiber channels.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Nemanja Vokic, Dinka Milovancev, Fotini Karinou, Bernhard Schrenk
Summary: This article introduces a simplified receiver based on an electro-absorption modulated laser, which can achieve reception of 1Gb/s phase-modulated signals in an optical network and support high passive splits.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
M. V. Ramana Murty, Jingyi Wang, Ann Lehman Harren, An-Nien Cheng, David W. Dolfi, Zheng-Wen Feng, Aaditya Sridhara, Sumitro Taslim Joyo, Jason Chu, Laura M. Giovane
Summary: This article discusses the development of multi-mode VCSELs with improved bandwidth and noise performance for 100 Gb/s data communication links over multi-mode fiber. The VCSELs are designed to maximize transmission distance at the peak multi-mode fiber bandwidth of 850 nm. Experimental results demonstrate successful transmission of PAM-4 signals using equalization techniques.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Yuan Yuan, Zhihong Huang, Xiaoge Zeng, Di Liang, Wayne V. Sorin, Marco Fiorentino, Raymond G. Beausoleil
Summary: We present an improved silicon-germanium waveguide avalanche photodiode with a loop reflector-assisted design, which achieves a 1.49 times increase in responsivity without compromising speed performance. It exhibits a wide bandwidth, high gain-bandwidth product, and demonstrates excellent performance in high-speed data transmission.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Optics
Yuxuan Li, Xiaobin Liu, Xuetong Li, Lanxuan Zhang, Baisong Chen, Zihao Zhi, Xueyan Li, Guowei Zhang, Peng Ye, Guanzhong Huang, Deyong He, Wei Chen, Fengli Gao, Pengfei Guo, Xianshu Luo, Guoqiang Lo, Junfeng Song
Summary: This study proposes a Ge-on-Si APD operating at room temperature, with low dark current and low breakdown voltage, combined with an RF amplifier module and counter for efficient detection of 1550 nm weak light signals.
CHINESE OPTICS LETTERS
(2022)
Article
Crystallography
Liang Chen, Zhi Wei, Di Wang, Hong-Xu Liu, Guang-Yong Jin
Summary: The experimental study found that the surface temperature rise of silicon avalanche photodiode (Si-APD) is closely related to the external capacitance, with smaller external capacitance resulting in smaller temperature rise. The research has practical significance for the damage and protection of mid-infrared detectors.
Article
Engineering, Electrical & Electronic
Xiang Li, Md Saifuddin Faruk, Seb J. Savory
Summary: In this letter, a bidirectional symmetric 100 Gb/s/lambda coherent passive optical network (PON) scheme with a simplified optical network unit (ONU) transceiver is proposed and experimentally demonstrated. The proposed scheme achieves a power budget of more than 30 dB for both downstream and upstream signals at 100 Gb/s/lambda, showcasing its potential for high-speed optical communication.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Ye Cao, Tarick Osman, Edmund Clarke, Pallavi Kisan Patil, Jo Shien Ng, Chee Hing Tan
Summary: Avalanche photodiodes (APDs) made with AlGaAsSb exhibit excellent noise characteristics. The SAM-APD incorporating GaAsSb absorption region and AlGaAsSb avalanche region shows a cutoff wavelength of 1.70 μm and a responsivity of 0.39 A/W at 1.55 μm wavelength. The temperature dependence of the breakdown voltage is significantly smaller compared to InP and InAlAs SAM-APDs.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Jie Li, Xiang Li, Ming Luo, Xu Zhang, Chao Yang, Hongguang Zhang, Runzhe Fan, Qianshen Wang, Dong Wang, Xinlun Cai, Xi Xiao
Summary: In this paper, we experimentally demonstrate 200 Gb/s/? and 240 Gb/s/? time division multiplexed passive optical network (TDM-PON) downstream transmissions based on four-level pulsed amplitude (PAM-4) modulation with direct detection in O-band. We propose a simplified Volterra nonlinear equalizer (S-VNLE) to reduce the computational complexity and achieve power budgets of 29 dB and 28 dB for 200 Gb/s/? and 240 Gb/s/? PON system, respectively, after 20 km standard single mode fiber (SSMF), considering the soft-decision FEC (SD-FEC) threshold (1 x 10(-2)).
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2023)
