4.7 Article

Alkoxy-capped carbazole dendrimers as host materials for highly efficient narrowband electroluminescence by solution process

Journal

CHEMICAL ENGINEERING JOURNAL
Volume 447, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2022.137517

Keywords

Dendrimer; Host material; Narrowband emission; Solution process; Organic light-emitting diodes

Funding

  1. Science and Technology Develop-ment Plan Project of Jilin Province [20210101124JC]
  2. National Natural Science Foundation of China [52122309, 21975247]
  3. Youth Innovation Promotion Association of Chinese Academy of Sciences [2015180]

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Efficient narrowband electroluminescence was achieved by designing novel dendritic host materials. Barrier-free hole injection from anode to emissive layer was achieved by introducing electron-donating groups and using new-generation dendrons.
Narrowband electroluminescence from multi-resonance thermally activated delayed fluorescence (MR-TADF) emitters have attracted much attention owing to their potential in developing high-resolution organic light emitting diode (OLED) displays. However, host materials used for MR-TADF emitters are mainly focused on small molecules that are relying on vacuum deposition for device fabrication. Here, we demonstrate the design of novel host materials with dendritic structures consisting of a non-conjugated adamantane core and four alkoxycapped carbazole dendrons in periphery for solution-processed MR-TADF OLEDs with highly efficient narrow band electroluminescence. By introducing electron-donating n-butoxy capping groups to carbazole units and using the second-generation dendrons instead of the first-generation ones, triplet energies for the dendritic hosts are kept at higher than 2.80 eV, but the highest occupied molecular orbital (HOMO) levels can be considerably elevated from-5.51 to-5.19 eV, leading to barrier-free hole injection from anode to emissive layer. Solution processed OLEDs based on the alkoxy-capped dendritic host and B,N-containing MR-TADF emitter reveal narrowband emission with full-width at half-maximum of 42 nm, together with low turn-on voltage of 2.8 V, maximum external quantum efficiency of 24.2% and power efficiency of 95.0 lm W-1, which represent the promising device efficiencies for narrowband electroluminescence by solution process.

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