4.7 Article

Transparent organic photodiodes for high-detectivity CMOS image sensors


Volume 9, Issue 9, Pages 992-999


Optica Publishing Group
DOI: 10.1364/OPTICA.449557





  1. Ministry of Science and ICT, South Korea [NRF2020R1F1A1073564, IITP-2022-2020-0-01461, 2009-0082580]
  2. Korea Electric Power Corporation [R21XO01-20]
  3. Technology Innovation Program, Ministry of Trade, Industry Energy, Korea [RS-2022-00154781]

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The demand for high-definition CMOS image sensors has increased in recent years, and this study proposes transparent green-sensitive organic photodetectors (TG-OPDs) for organic-silicon hybrid CMOS image sensors, with high detectivity and responsivity.
The demand for high-definition complementary metal-oxide-semiconductor (CMOS) image sensors has increased considerably over the past few years in industry as well as in academia. Here we propose transparent green-sensitive organic photodetectors (TG-OPDs) with both dark-current-based high detectivity (over 10(14) cm HZ(1/2) W-1 at a wavelength of 550 nm under 3 V) and high responsivity (0.34 AW(-1) under 3 V) for organic-silicon hybrid CMOS image sensors. A bathocuproine : C-60 electron-transporting layer provided the fabricated TG-OPDs with a minimal junction resistivity, smooth morphology, and desirable energy level modulation, resulting in exceptional light sensitivity, a low dark current (below 10(-11) A cm(-2)), and a high rectification ratio spanning 10 orders of magnitude. The TG-OPDs had high-temperature endurance (up to 150 degrees C for 2 h) and operational stability under intense heat (above 85 degrees C) for 50 d. We expect this performance to enable the industrialization of these TG-OPDs for optoelectronic sensor applications, such as photoplethysmography, fingerprint recognition, proximity sensing, and imaging. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement


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